A stacking metal-insulator-semiconductor (MIS) solar cell structure, which integrates an n-type MIS solar cell with a p-type MIS solar cell, is proposed to effectively enlarge the open-circuit voltage Voc. The measured Voc is up to 0.71 V under simulated air mass 1.5 illumination (100 mW/cm2. This Voc is larger than those of the n-type or p-type MIS solar cells with or without surface passivation. In this letter, we successfully demonstrate the feasibility of the Voc enhancement of MIS solar cells by using a stacking structure.
- Metal-insulator-semiconductor (MIS) solar cells
- open-circuit voltage
- photovoltaic devices
- stacking solar cells