A metal-insulator-semiconductor solar cell with high open-circuit voltage using a stacking structure

Tzu Yueh Chang*, Chun Lung Chang, Hsin Yu Lee, Po-Tsung Lee

*Corresponding author for this work

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

A stacking metal-insulator-semiconductor (MIS) solar cell structure, which integrates an n-type MIS solar cell with a p-type MIS solar cell, is proposed to effectively enlarge the open-circuit voltage Voc. The measured Voc is up to 0.71 V under simulated air mass 1.5 illumination (100 mW/cm2. This Voc is larger than those of the n-type or p-type MIS solar cells with or without surface passivation. In this letter, we successfully demonstrate the feasibility of the Voc enhancement of MIS solar cells by using a stacking structure.

Original languageEnglish
Article number5599956
Pages (from-to)1419-1421
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number12
DOIs
StatePublished - 1 Dec 2010

Keywords

  • Metal-insulator-semiconductor (MIS) solar cells
  • open-circuit voltage
  • photovoltaic devices
  • stacking solar cells

Fingerprint Dive into the research topics of 'A metal-insulator-semiconductor solar cell with high open-circuit voltage using a stacking structure'. Together they form a unique fingerprint.

Cite this