Abstract
A stacking metal-insulator-semiconductor (MIS) solar cell structure, which integrates an n-type MIS solar cell with a p-type MIS solar cell, is proposed to effectively enlarge the open-circuit voltage Voc. The measured Voc is up to 0.71 V under simulated air mass 1.5 illumination (100 mW/cm2. This Voc is larger than those of the n-type or p-type MIS solar cells with or without surface passivation. In this letter, we successfully demonstrate the feasibility of the Voc enhancement of MIS solar cells by using a stacking structure.
Original language | English |
---|---|
Article number | 5599956 |
Pages (from-to) | 1419-1421 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 31 |
Issue number | 12 |
DOIs | |
State | Published - 1 Dec 2010 |
Keywords
- Metal-insulator-semiconductor (MIS) solar cells
- open-circuit voltage
- photovoltaic devices
- stacking solar cells