A metal-insulator-semiconductor solar cell with high open-circuit voltage using a stacking structure

Tzu Yueh Chang; Chun Lung Chang; Hsin Yu Lee; Po-Tsung Lee

doi:10.1109/LED.2010.2073437

A metal-insulator-semiconductor solar cell with high open-circuit voltage using a stacking structure

Tzu Yueh Chang^*, Chun Lung Chang, Hsin Yu Lee, Po-Tsung Lee

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article

10 Scopus citations

Abstract

A stacking metal-insulator-semiconductor (MIS) solar cell structure, which integrates an n-type MIS solar cell with a p-type MIS solar cell, is proposed to effectively enlarge the open-circuit voltage V_oc. The measured V_oc is up to 0.71 V under simulated air mass 1.5 illumination (100 mW/cm₂. This V_oc is larger than those of the n-type or p-type MIS solar cells with or without surface passivation. In this letter, we successfully demonstrate the feasibility of the V_oc enhancement of MIS solar cells by using a stacking structure.

Original language	English
Article number	5599956
Pages (from-to)	1419-1421
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	12
DOIs	https://doi.org/10.1109/LED.2010.2073437
State	Published - 1 Dec 2010

Keywords

Metal-insulator-semiconductor (MIS) solar cells
open-circuit voltage
photovoltaic devices
stacking solar cells

Access to Document

10.1109/LED.2010.2073437

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abstract = "A stacking metal-insulator-semiconductor (MIS) solar cell structure, which integrates an n-type MIS solar cell with a p-type MIS solar cell, is proposed to effectively enlarge the open-circuit voltage Voc. The measured Voc is up to 0.71 V under simulated air mass 1.5 illumination (100 mW/cm2. This Voc is larger than those of the n-type or p-type MIS solar cells with or without surface passivation. In this letter, we successfully demonstrate the feasibility of the Voc enhancement of MIS solar cells by using a stacking structure.",

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