A low quiescent current and cross regulation single-inductor dual-output converter with stacking MOSFET driving technique

Yu Sheng Ma, Wen Hau Yang, Yen Ting Lin, Hsin Chen, Li Chi Lin, Ke-Horng Chen, Chin Long Wey, Ying Hsi Lin, Jian Ru Lin, Tsung Yen Tsai, Jui Lung Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The stacking MOSFET structure composed of low-voltage devices suffers from deteriorated transient response or large footprint area when capacitor-free or dominant pole compensation low dropout (LDO) regulator biases the driver. Due to self-stabilized feature, the proposed stacking MOSFET driving (SMD) technique effectively drives the power stage and greatly reduces noise interference from the noisy node to achieve low cross regulation (CR) in the single-inductor dual-output (SIDO) converter. Moreover, two inherent low dropout (LDO) regulators in the SMD technique completely regulate two outputs with low quiescent current at no load condition. Experimental results show the tested chip fabricated in 0.25μm process with low cross regulation of 0.015mV/mA and ultra-low quiescent current of 5μA at no load condition.

Original languageEnglish
Title of host publicationESSCIRC 2017 - 43rd IEEE European Solid State Circuits Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages352-355
Number of pages4
ISBN (Electronic)9781509050253
DOIs
StatePublished - 2 Nov 2017
Event43rd IEEE European Solid State Circuits Conference, ESSCIRC 2017 - Leuven, Belgium
Duration: 11 Sep 201714 Sep 2017

Publication series

NameESSCIRC 2017 - 43rd IEEE European Solid State Circuits Conference

Conference

Conference43rd IEEE European Solid State Circuits Conference, ESSCIRC 2017
CountryBelgium
CityLeuven
Period11/09/1714/09/17

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  • Cite this

    Ma, Y. S., Yang, W. H., Lin, Y. T., Chen, H., Lin, L. C., Chen, K-H., Wey, C. L., Lin, Y. H., Lin, J. R., Tsai, T. Y., & Chen, J. L. (2017). A low quiescent current and cross regulation single-inductor dual-output converter with stacking MOSFET driving technique. In ESSCIRC 2017 - 43rd IEEE European Solid State Circuits Conference (pp. 352-355). [8094598] (ESSCIRC 2017 - 43rd IEEE European Solid State Circuits Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ESSCIRC.2017.8094598