A low-power self-forward-body-bias CMOS LNA for 36.5-GHz UWB receivers

Chen Ming Li; Ming Tsung Li; Kuang Chi He; Jenn-Hawn Tarng

doi:10.1109/LMWC.2009.2038526

A low-power self-forward-body-bias CMOS LNA for 36.5-GHz UWB receivers

Chen Ming Li^*, Ming Tsung Li, Kuang Chi He, Jenn-Hawn Tarng

^*Corresponding author for this work

Department of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

41 Scopus citations

Abstract

A low-power low-noise amplifier (LNA) implemented in 0.18 μm CMOS technology utilizing a self-forward-body-bias (SFBB) technique is proposed for UWB low-frequency band system. By using the SFBB technique, it reduces supply voltage as well as saves additional bias circuits, which leads to low power consumption of 4.5 mW with low supply voltage of 1.06 V for two drain-to-source voltage drops. The complementary architecture and direct coupling technique between the first two stages also save bias circuits. The measurement result shows that the proposed LNA presents a maximum power gain of 16 dB with a good input impedance matching (S11 <- 12 dB) and an average noise figure of 2.65 dB in the frequency range of 36.5 GHz.

Original language	English
Article number	16
Pages (from-to)	100-102
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	20
Issue number	2
DOIs	https://doi.org/10.1109/LMWC.2009.2038526
State	Published - 1 Feb 2010

Keywords

CMOS
Forward body bias (FBB)
Low noise amplifier (LNA)
Low power
Ultra-wideband (UWB)

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10.1109/LMWC.2009.2038526

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title = "A low-power self-forward-body-bias CMOS LNA for 36.5-GHz UWB receivers",

abstract = "A low-power low-noise amplifier (LNA) implemented in 0.18 μm CMOS technology utilizing a self-forward-body-bias (SFBB) technique is proposed for UWB low-frequency band system. By using the SFBB technique, it reduces supply voltage as well as saves additional bias circuits, which leads to low power consumption of 4.5 mW with low supply voltage of 1.06 V for two drain-to-source voltage drops. The complementary architecture and direct coupling technique between the first two stages also save bias circuits. The measurement result shows that the proposed LNA presents a maximum power gain of 16 dB with a good input impedance matching (S11 <- 12 dB) and an average noise figure of 2.65 dB in the frequency range of 36.5 GHz.",

keywords = "CMOS, Forward body bias (FBB), Low noise amplifier (LNA), Low power, Ultra-wideband (UWB)",

author = "Li, {Chen Ming} and Li, {Ming Tsung} and He, {Kuang Chi} and Jenn-Hawn Tarng",

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doi = "10.1109/LMWC.2009.2038526",

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AU - Li, Chen Ming

AU - Li, Ming Tsung

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AU - Tarng, Jenn-Hawn

PY - 2010/2/1

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N2 - A low-power low-noise amplifier (LNA) implemented in 0.18 μm CMOS technology utilizing a self-forward-body-bias (SFBB) technique is proposed for UWB low-frequency band system. By using the SFBB technique, it reduces supply voltage as well as saves additional bias circuits, which leads to low power consumption of 4.5 mW with low supply voltage of 1.06 V for two drain-to-source voltage drops. The complementary architecture and direct coupling technique between the first two stages also save bias circuits. The measurement result shows that the proposed LNA presents a maximum power gain of 16 dB with a good input impedance matching (S11 <- 12 dB) and an average noise figure of 2.65 dB in the frequency range of 36.5 GHz.

AB - A low-power low-noise amplifier (LNA) implemented in 0.18 μm CMOS technology utilizing a self-forward-body-bias (SFBB) technique is proposed for UWB low-frequency band system. By using the SFBB technique, it reduces supply voltage as well as saves additional bias circuits, which leads to low power consumption of 4.5 mW with low supply voltage of 1.06 V for two drain-to-source voltage drops. The complementary architecture and direct coupling technique between the first two stages also save bias circuits. The measurement result shows that the proposed LNA presents a maximum power gain of 16 dB with a good input impedance matching (S11 <- 12 dB) and an average noise figure of 2.65 dB in the frequency range of 36.5 GHz.

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