A low-power GaAs front-end IC with current-reuse configuration using 0.15-μm-Gate MODFET's

Hidetoshi Ishida*, Haruhiko Koizumi, Kazuo Miyatsuji, Hiroshi Takenaka, Tsuyoshi Tanaka, Daisuke Ueda

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

We have developed a novel current-reuse configuration of a front-end integrated circuit (IC), where the current can be reused in the whole circuit blocks that are a low-noise amplifier, local amplifier, and mixer. The power dissipation of the front-end IC is reduced by the factor of three as compared to conventional front-end IC's. Excellent RF performance such as conversion gain of 30 dB and noise figure of 1.6 dB at 1.5 GHz is attained under the conditions of the supply voltage and current of 3.6 V and 3 mA, respectively.

Original languageEnglish
Pages (from-to)1303-1307
Number of pages5
JournalIEEE Transactions on Microwave Theory and Techniques
Volume48
Issue number8
DOIs
StatePublished - 1 Dec 2000

Keywords

  • Current reuse
  • FET
  • Front-end
  • Gaas
  • Low power
  • Phase-shift lithography

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