A low-power current-reuse LNA for ultra-wideband wireless receivers from 3.1 to 10.6 GHz

H. L. Kao*, Albert Chin, K. C. Chang, S. P. McAlister

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

20 Scopus citations

Abstract

We present an ultra-wideband 3.1-10.6 GHz low-noise amplifier which uses a two-stage current-reuse structure to reduce the power. Fabricated in a 0.18 μm CMOS process, the IC prototype achieved a power gain of 9.3 dB, a noise figure (NF) of < 5.6 dB, an input match of < -8 dB over the band, while consuming only 9.4 mW.

Original languageEnglish
Title of host publication2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07
Pages257-260
Number of pages4
DOIs
StatePublished - 2 Aug 2007
Event2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07 - Long Beach, CA, United States
Duration: 10 Jan 200712 Jan 2007

Publication series

Name2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07

Conference

Conference2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07
CountryUnited States
CityLong Beach, CA
Period10/01/0712/01/07

Keywords

  • CMOS
  • Low noise amplifier
  • Low power
  • Ultra-wideband

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