A low operating voltage ZnO thin film transistor using a high- κ HfLaO gate dielectric

N. C. Su, S. J. Wang, Albert Chin

Research output: Contribution to journalArticle

14 Scopus citations

Abstract

This study demonstrates the feasibility of producing a ZnO thin film transistor (TFT) using hafnium-lanthanum-oxide (HfLaO) as the gate dielectric. By integrating high- κ HfLaO with an amorphous ZnO channel, the resulting HfLaO/ZnO TFTs display a low threshold voltage (VT) of 0.28 V, a small subthreshold swing (SS) of 0.26 V /dec, an acceptable mobility (μsat) of 3.5 cm2 /V s, and a good Ion / Ioff ratio of 1× 106. The SS heavily depends on the HfLaO/ZnO interface charges, a property which is related to the degree of crystallization of ZnO. The low VT and the small SS allow device voltage operation below 2 V for low power application.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume13
Issue number1
DOIs
StatePublished - 26 Nov 2009

Fingerprint Dive into the research topics of 'A low operating voltage ZnO thin film transistor using a high- κ HfLaO gate dielectric'. Together they form a unique fingerprint.

Cite this