A low-current and low-distortion wide-band amplifier using 0.2-m gate modfet fabricated by using phase-shift lithography

Hidetoshi Ishida*, Kazuo Miyatsuji, Tsuyoshi Tanaka, Hiroshi Takenaka, Hidetoshi Furukawa, Mitsuru Nishitsuji, Akiyoshi Tamura, Daisuke Ueda

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

We have developed a wide-band amplifier that can keep a gain over 10 dB at an operation current of 10 niA from 100 MHz to 3 GHz. The fabricated integrated circuit (1C) achieved a high-output third-order intercept point of 30 dBm and low noise figure of 1.6 dB at 800 MHz, respectively. The present 1C employs a MODFET with 0.2-//m gate fabricated by using a phase-shift lithography technique.

Original languageEnglish
Pages (from-to)771-776
Number of pages6
JournalIEEE Transactions on Microwave Theory and Techniques
Volume48
Issue number5
DOIs
StatePublished - 1 May 2000

Keywords

  • Amplifier
  • Feedback
  • GaAs
  • Lithography
  • Low current
  • Low distortion
  • MODFET
  • Phase shift
  • Wide-band

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