A low-current and low-distortion wide-band amplifier using 0.2-m gate modfet fabricated by using phase-shift lithography

Hidetoshi Ishida; Kazuo Miyatsuji; Tsuyoshi Tanaka; Hiroshi Takenaka; Hidetoshi Furukawa; Mitsuru Nishitsuji; Akiyoshi Tamura; Daisuke Ueda

doi:10.1109/22.841870

A low-current and low-distortion wide-band amplifier using 0.2-m gate modfet fabricated by using phase-shift lithography

Hidetoshi Ishida^*, Kazuo Miyatsuji, Tsuyoshi Tanaka, Hiroshi Takenaka, Hidetoshi Furukawa, Mitsuru Nishitsuji, Akiyoshi Tamura, Daisuke Ueda

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We have developed a wide-band amplifier that can keep a gain over 10 dB at an operation current of 10 niA from 100 MHz to 3 GHz. The fabricated integrated circuit (1C) achieved a high-output third-order intercept point of 30 dBm and low noise figure of 1.6 dB at 800 MHz, respectively. The present 1C employs a MODFET with 0.2-//m gate fabricated by using a phase-shift lithography technique.

Original language	English
Pages (from-to)	771-776
Number of pages	6
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	48
Issue number	5
DOIs	https://doi.org/10.1109/22.841870
State	Published - 1 May 2000

Keywords

Amplifier
Feedback
GaAs
Lithography
Low current
Low distortion
MODFET
Phase shift
Wide-band

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10.1109/22.841870

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Ishida, Hidetoshi ; Miyatsuji, Kazuo ; Tanaka, Tsuyoshi ; Takenaka, Hiroshi ; Furukawa, Hidetoshi ; Nishitsuji, Mitsuru ; Tamura, Akiyoshi ; Ueda, Daisuke. / A low-current and low-distortion wide-band amplifier using 0.2-m gate modfet fabricated by using phase-shift lithography. In: IEEE Transactions on Microwave Theory and Techniques. 2000 ; Vol. 48, No. 5. pp. 771-776.

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title = "A low-current and low-distortion wide-band amplifier using 0.2-m gate modfet fabricated by using phase-shift lithography",

abstract = "We have developed a wide-band amplifier that can keep a gain over 10 dB at an operation current of 10 niA from 100 MHz to 3 GHz. The fabricated integrated circuit (1C) achieved a high-output third-order intercept point of 30 dBm and low noise figure of 1.6 dB at 800 MHz, respectively. The present 1C employs a MODFET with 0.2-//m gate fabricated by using a phase-shift lithography technique.",

keywords = "Amplifier, Feedback, GaAs, Lithography, Low current, Low distortion, MODFET, Phase shift, Wide-band",

author = "Hidetoshi Ishida and Kazuo Miyatsuji and Tsuyoshi Tanaka and Hiroshi Takenaka and Hidetoshi Furukawa and Mitsuru Nishitsuji and Akiyoshi Tamura and Daisuke Ueda",

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A low-current and low-distortion wide-band amplifier using 0.2-m gate modfet fabricated by using phase-shift lithography. / Ishida, Hidetoshi; Miyatsuji, Kazuo; Tanaka, Tsuyoshi; Takenaka, Hiroshi; Furukawa, Hidetoshi; Nishitsuji, Mitsuru; Tamura, Akiyoshi; Ueda, Daisuke.

In: IEEE Transactions on Microwave Theory and Techniques, Vol. 48, No. 5, 01.05.2000, p. 771-776.

Research output: Contribution to journal › Article › peer-review

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T1 - A low-current and low-distortion wide-band amplifier using 0.2-m gate modfet fabricated by using phase-shift lithography

AU - Ishida, Hidetoshi

AU - Miyatsuji, Kazuo

AU - Tanaka, Tsuyoshi

AU - Takenaka, Hiroshi

AU - Furukawa, Hidetoshi

AU - Nishitsuji, Mitsuru

AU - Tamura, Akiyoshi

AU - Ueda, Daisuke

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N2 - We have developed a wide-band amplifier that can keep a gain over 10 dB at an operation current of 10 niA from 100 MHz to 3 GHz. The fabricated integrated circuit (1C) achieved a high-output third-order intercept point of 30 dBm and low noise figure of 1.6 dB at 800 MHz, respectively. The present 1C employs a MODFET with 0.2-//m gate fabricated by using a phase-shift lithography technique.

AB - We have developed a wide-band amplifier that can keep a gain over 10 dB at an operation current of 10 niA from 100 MHz to 3 GHz. The fabricated integrated circuit (1C) achieved a high-output third-order intercept point of 30 dBm and low noise figure of 1.6 dB at 800 MHz, respectively. The present 1C employs a MODFET with 0.2-//m gate fabricated by using a phase-shift lithography technique.

KW - Amplifier

KW - Feedback

KW - GaAs

KW - Lithography

KW - Low current

KW - Low distortion

KW - MODFET

KW - Phase shift

KW - Wide-band

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