A little known benefit of FinFET over Planar MOSFET in highperformance circuits at advanced technology nodes

Angada B. Sachid*, Chen-Ming Hu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Scopus citations

Abstract

Power dissipation and power density are limiting the maximum operating frequency of highperformance circuits. This has forced a change in the micro-architecture of processors. High frequency, complex single-core architectures are replaced by simpler multi-core architectures that operate at a lower frequency (Fig.1) [1-4]. At sub-22nm nodes, cooling even the multi-core processors using economical cooling options will be challenging due to increasing power density. Hence, there is an imminent need to identify sources with potential to address this issue at the device level so that the benefits can propagate to the circuit level. In this work, we discuss the difference in the difference in the nature of parasitic capacitance in FinFETs and Planar MOSFETs, and its significant impact on circuit performance. Ultra-Thin Body SOI (UTBSOI) MOSFETs [5] is used as an example for Planar MOSFETs.

Original languageEnglish
Title of host publication2012 IEEE International SOI Conference, SOI 2012
DOIs
StatePublished - 1 Dec 2012
Event2012 IEEE International SOI Conference, SOI 2012 - Napa, CA, United States
Duration: 1 Oct 20124 Oct 2012

Publication series

NameProceedings - IEEE International SOI Conference
ISSN (Print)1078-621X

Conference

Conference2012 IEEE International SOI Conference, SOI 2012
CountryUnited States
CityNapa, CA
Period1/10/124/10/12

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    Sachid, A. B., & Hu, C-M. (2012). A little known benefit of FinFET over Planar MOSFET in highperformance circuits at advanced technology nodes. In 2012 IEEE International SOI Conference, SOI 2012 [6404367] (Proceedings - IEEE International SOI Conference). https://doi.org/10.1109/SOI.2012.6404367