@inproceedings{9d5de95179774cb9a31e62806913ab8f,
title = "A lateral P-SI-N diode SPDT switch for Ka-band applications",
abstract = "We report on lateral GaAs P-Semi-Insulator-N diode switches. The single P-Semi-Insulator-N structure showed the insertion loss of as low as 0.66 dB and the implemented SPDT switch that comprised the diodes exhibited the insertion loss of as low as 1.8 dB and isolation of 35 dB at 30 GHz. The proposed P-Semi-Insulator-N structure was easily formed by ion-implant technique and makes it possible to integrate with any active devices.",
author = "Mitsuru Tanabe and Iwanaga, {Junko Sato} and Motonori Ishii and Kazuo Miyatsuji and Yorito Ota and Daisuke Ueda",
year = "1999",
month = dec,
day = "1",
doi = "10.1109/GAAS.1999.803772",
language = "English",
isbn = "0780355865",
series = "Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)",
publisher = "IEEE",
pages = "263--266",
booktitle = "Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)",
note = "null ; Conference date: 17-10-1999 Through 20-10-1999",
}