A latchup-immune and robust SCR device for ESD protection in 0.25-μ m 5-V CMOS process

Yu Ching Huang, Ming-Dou Ker

Research output: Contribution to journalArticlepeer-review

24 Scopus citations

Abstract

Based on good electrostatic discharge (ESD) robustness, silicon-controlled rectifier (SCR) device is used for on-chip ESD protection. The major concern of SCR is the latch-up issue, because of its low holding voltage. Previous papers tried to design latchup-immune SCR devices; however, those devices would cause lower ESD robustness. In this letter, a new latchup-immune and robust SCR device for ESD protection is proposed and verified in a 0.25-μ m 5-V CMOS process. Through inserting one additional parasitic bipolar junction transistor into SCR device structure, this new proposed SCR can increase the holding voltage without causing degradation on its ESD robustness.

Original languageEnglish
Article number6491440
Pages (from-to)674-676
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number5
DOIs
StatePublished - 5 Apr 2013

Keywords

  • Electrostatic discharges (ESD)
  • latchup
  • silicon-controlled rectifier (SCR)

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