A L.2V broadband D-band power amplifier with 13.2-dBm output power in standard RF 65-nm CMOS

Zuo-Min Tsai *, Hsin Chiang Liao, Yuan Hong Hsiao, Huei Wang, Jenny Yi Chun Liu, Mau-Chung Chang, Yu Ming Teng, Guo Wei Huang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

19 Scopus citations

Abstract

A D-band CMOS power amplifier in 65-nm CMOS with wider than 30 GHz small signal gain bandwidth is developed by using proposed impedance transform network to split original matching network into 8-ways to integrate 8 transistors. Without using additional combining networks, the 4-stage power amplifier achieves 13.2 dBm saturation output power with L.2 V supply at 140 GHz in a compact size of 0.38 mm 2. The peak power-added efficiency is 14.6% with 115.2 mW dc power.

Original languageEnglish
Title of host publicationIMS 2012 - 2012 IEEE MTT-S International Microwave Symposium
DOIs
StatePublished - 3 Oct 2012
Event2012 IEEE MTT-S International Microwave Symposium, IMS 2012 - Montreal, QC, Canada
Duration: 17 Jun 201222 Jun 2012

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X

Conference

Conference2012 IEEE MTT-S International Microwave Symposium, IMS 2012
CountryCanada
CityMontreal, QC
Period17/06/1222/06/12

Keywords

  • CMOS power amplifier
  • D-band
  • Impedance transform network
  • Power combining

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