This paper proposed a Ka-band divide-by-two quadrature-outputs regenerative divider using the 0.15-m AlGaAs/InGaAs pseudomorphic high electron mobility transistor (pHEMT) technology. The circuit topology consists of one Marchand balun and two Miller dividers. The input Marchand balun with accurately balanced outputs and symmetrical path routing bring about the precisely quadrature outputs of the divider, while the divider operates up to high frequencies thanks to the high performance of the 0.15-m pHEMT technology and a semi-insulating substrate. The divider includes a single side-band (SSB) up-converter to verify the quadrature accuracy of the divider's outputs. A 35-dB side-band rejection ratio is achieved. The minimum input sensitivity equals 2.7 dBm. The stable division from 32 to 36 GHz in a fractional bandwidth of 12 % can be obtained. This regenerative frequency divider power consumption is 106 mW. Without the SSB test circuit, the layout size is 1.37 × 1.6 mm 2.