A K band high power amplfier in 180-nm CMOS

Cheng Hung Hsieh, Zuo-Min Tsai

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A fully integrated K band high power amplifier was designed and fabricated in 0.18 um CMOS technology. Some design and layout techniques are proposed to reduce the DC bias complexity of this 8-way combined high power amplifier. The measurement result shows that this amplifier achieves 20 dBm saturation output power, 6 GHz 3-dB bandwidth, and flat gain response from 20.4 GHz to 24.1 GHz.

Original languageEnglish
Title of host publication2015 International Workshop on Electromagnetics
Subtitle of host publicationApplications and Student Innovation Competition, iWEM 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781467369527
DOIs
StatePublished - 23 Dec 2015
EventInternational Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2015 - Hsin-Chu, Taiwan
Duration: 16 Nov 201518 Nov 2015

Publication series

Name2015 International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2015

Conference

ConferenceInternational Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2015
CountryTaiwan
CityHsin-Chu
Period16/11/1518/11/15

Keywords

  • cascode
  • CMOS
  • K band
  • power combining

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