A K band high power amplfier in 180-nm CMOS

Cheng Hung Hsieh; Zuo-Min Tsai

doi:10.1109/iWEM.2015.7365083

A K band high power amplfier in 180-nm CMOS

Cheng Hung Hsieh, Zuo-Min Tsai

Institute of Communications Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A fully integrated K band high power amplifier was designed and fabricated in 0.18 um CMOS technology. Some design and layout techniques are proposed to reduce the DC bias complexity of this 8-way combined high power amplifier. The measurement result shows that this amplifier achieves 20 dBm saturation output power, 6 GHz 3-dB bandwidth, and flat gain response from 20.4 GHz to 24.1 GHz.

Original language	English
Title of host publication	2015 International Workshop on Electromagnetics
Subtitle of host publication	Applications and Student Innovation Competition, iWEM 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781467369527
DOIs	https://doi.org/10.1109/iWEM.2015.7365083
State	Published - 23 Dec 2015
Event	International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2015 - Hsin-Chu, Taiwan Duration: 16 Nov 2015 → 18 Nov 2015

Publication series

Name	2015 International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2015

Conference

Conference	International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2015
Country	Taiwan
City	Hsin-Chu
Period	16/11/15 → 18/11/15

Keywords

cascode
CMOS
K band
power combining

Access to Document

10.1109/iWEM.2015.7365083

Link to publication in Scopus

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Hsieh, C. H., & Tsai , Z-M. (2015). A K band high power amplfier in 180-nm CMOS. In 2015 International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2015 [7365083] (2015 International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/iWEM.2015.7365083

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abstract = "A fully integrated K band high power amplifier was designed and fabricated in 0.18 um CMOS technology. Some design and layout techniques are proposed to reduce the DC bias complexity of this 8-way combined high power amplifier. The measurement result shows that this amplifier achieves 20 dBm saturation output power, 6 GHz 3-dB bandwidth, and flat gain response from 20.4 GHz to 24.1 GHz.",

keywords = "cascode, CMOS, K band, power combining",

author = "Hsieh, {Cheng Hung} and Zuo-Min Tsai",

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Hsieh, CH & Tsai , Z-M 2015, A K band high power amplfier in 180-nm CMOS. in 2015 International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2015., 7365083, 2015 International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2015, Institute of Electrical and Electronics Engineers Inc., International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2015, Hsin-Chu, Taiwan, 16/11/15. https://doi.org/10.1109/iWEM.2015.7365083

A K band high power amplfier in 180-nm CMOS. / Hsieh, Cheng Hung; Tsai , Zuo-Min.

2015 International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7365083 (2015 International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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Hsieh CH, Tsai Z-M. A K band high power amplfier in 180-nm CMOS. In 2015 International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7365083. (2015 International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2015). https://doi.org/10.1109/iWEM.2015.7365083