A K-band AlGaN/GaN HFET MMIC Amplifier on Sapphire using novel superlattice cap layer

Masaaki Nishijima*, Tomohiro Murata, Yutaka Hirose, Masahiro Hikita, Noboru Negoro, Hiroyuki Sakai, Yasuhiro Uemoto, Kaoru Inoue, Tsuyoshi Tanaka, Daisuke Ueda

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

7 Scopus citations

Abstract

We have developed a K-band AlGaN/GaN HFET MMIC amplifier by applying an AlGaN/GaN superlattice (SL) capped structure on sapphire substrate. Owing to the lowest (0.4 Ω ·mm) source resistance of AlGaN/GaN HFETs, the HFETs exhibited excellent DC and RF characteristics, and sufficient ability to operate in the K-band frequency range is obtained. The fabricated MMIC with a CPW-line structure exhibited a smallsignal gain higher than 10 dB with a 3-dB bandwidth of 20-24.5 GHz and that of 13 dB at 21.6GHz when biased at a supply voltage of 7 V The IdB compression point (P1dB) referred to output of 15.4 dBm at 21.6 GHz was obtained. This work is the first report of MMIC amplifier fabricated on sapphire successfully operating in the K band.

Original languageEnglish
Title of host publication2005 IEEE MTT-S International Microwave Symposium Digest
Pages299-302
Number of pages4
DOIs
StatePublished - 1 Dec 2005
Event2005 IEEE MTT-S International Microwave Symposium - Long Beach, CA, United States
Duration: 12 Jun 200517 Jun 2005

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
Volume2005
ISSN (Print)0149-645X

Conference

Conference2005 IEEE MTT-S International Microwave Symposium
CountryUnited States
CityLong Beach, CA
Period12/06/0517/06/05

Keywords

  • AlGaN/GaN heteroj unction FET
  • Coplanar waveguides
  • MMIC amplifiers
  • Sapphire
  • Source resistance
  • Superlattices

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