A K-band 16-way combined high power amplifier in 0.18-um CMOS

Cheng Hung Hsieh, Zuo-Min Tsai

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A fully integrated K-band two stage 16-way power amplifier was designed and fabricated in 0.18-um CMOS technology. By using the direct shunt combining method, the matching networks and combining networks can be designed simultaneously, and this realizes the combining possibility of sixteen power unit cells. At the same time, some design skills and layout techniques are proposed to reduce the DC bias and layout complexity. To the best of the author's knowledge, this is the first demonstration of such large number devices combining power amplifier among the reported CMOS K-band PA.

Original languageEnglish
Title of host publication2016 IEEE 5th Global Conference on Consumer Electronics, GCCE 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509023332
DOIs
StatePublished - 27 Dec 2016
Event5th IEEE Global Conference on Consumer Electronics, GCCE 2016 - Kyoto, Japan
Duration: 11 Oct 201614 Oct 2016

Publication series

Name2016 IEEE 5th Global Conference on Consumer Electronics, GCCE 2016

Conference

Conference5th IEEE Global Conference on Consumer Electronics, GCCE 2016
CountryJapan
CityKyoto
Period11/10/1614/10/16

Keywords

  • CMOS
  • direct shunt combining technique
  • K-band PA

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