A hot-carrier degradation mechanism and electrical characteristics in S4D n-MOSFET's

Takashi Yoshitomi*, Masanobu Saito, Tatsuya Ohguro, Mizuki Ono, Hisayo Sasaki Momose, Eiji Morifuji, Toyota Morimoto, Yasuhiro Katsumata, Hiroshi Iwai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

A suicided silicon-sidewall source and drain (S4D) nMOSFET is demonstrated and its hot carrier reliability is investigated for the first time. This S4D nMOSFET exhibited high drain current and well-suppressed short channel effects concurrently. In spite of the impact ionization rate issue, the S4D structure offers a major improvement in current and transconductance degradations as compared with the LDD structure. The mechanism of the improved hot carrier reliability is explained using a two-dimensional (2-D) simulation.

Original languageEnglish
Pages (from-to)2053-2058
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume44
Issue number11
DOIs
StatePublished - 1997

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