A holistic model for mobility enhancement through process-induced stress

Mohan V. Dunga, Xuemei Xi, Ali M. Niknejad, Chen-Ming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

A compact and scaleable holistic (non process-specific) model for mobility enhancement through process-induced stress is developed for the first time. The layout dependence of transistor m obility due to process-induced stress is efficiently captured. The mobility model is verified for different layout dimensions for several stress-inducing process technologies through both process simulations and experimental data.

Original languageEnglish
Title of host publication2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages43-46
Number of pages4
ISBN (Print)0780393392, 9780780393394
DOIs
StatePublished - 19 Dec 2005
Event2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC - Howloon, Hong Kong
Duration: 19 Dec 200521 Dec 2005

Publication series

Name2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

Conference

Conference2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
CountryHong Kong
CityHowloon
Period19/12/0521/12/05

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    Dunga, M. V., Xi, X., Niknejad, A. M., & Hu, C-M. (2005). A holistic model for mobility enhancement through process-induced stress. In 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC (pp. 43-46). [1635201] (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2005.1635201