A highly Integrated SiGeBiCMOS Class F Power Amplifier for Bluetooth Application

Jia-Liang Chen, Tang-Jung Chiu, Christina Jou

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A highly integrated 2.4-GHz Class F power amplifier using TSMC 0.35 mu m 3P3M standard SiGe BiCMOS process is presented. This amplifier integrates both the input matching network and output fundamental and third harmonic loading networks onto the chip. Additional fine tuning output circuit is implemented outside the chip for some flexibility. Measurement results show that the power amplifier can exhibit an output power about 20dBm, with power added efficiency (PAE) of 34.2% at 2.4-GHz Bluetooth frequency band. This result demonstrates the potential of full-scale integration of the high efficiency power amplifier.
Original languageEnglish
Title of host publication2006 INTERNATIONAL SYMPOSIUM ON VLSI DESIGN, AUTOMATION, AND TEST (VLSI-DAT), PROCEEDINGS OF TECHNICAL PAPERS
PublisherIEEE
Pages277-+
ISBN (Print)1-4244-0179-8
StatePublished - 2006
EventInternational Symposium on VLSI Design, Automation and Test - Hsinchu, Taiwan
Duration: 26 Apr 200628 Apr 2006

Conference

ConferenceInternational Symposium on VLSI Design, Automation and Test
CountryTaiwan
CityHsinchu
Period26/04/0628/04/06

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