A highly integrated 2.4-GHz Class F power amplifier using TSMC 0.35 mu m 3P3M standard SiGe BiCMOS process is presented. This amplifier integrates both the input matching network and output fundamental and third harmonic loading networks onto the chip. Additional fine tuning output circuit is implemented outside the chip for some flexibility. Measurement results show that the power amplifier can exhibit an output power about 20dBm, with power added efficiency (PAE) of 34.2% at 2.4-GHz Bluetooth frequency band. This result demonstrates the potential of full-scale integration of the high efficiency power amplifier.
|Title of host publication||2006 INTERNATIONAL SYMPOSIUM ON VLSI DESIGN, AUTOMATION, AND TEST (VLSI-DAT), PROCEEDINGS OF TECHNICAL PAPERS|
|State||Published - 2006|
|Event||International Symposium on VLSI Design, Automation and Test - Hsinchu, Taiwan|
Duration: 26 Apr 2006 → 28 Apr 2006
|Conference||International Symposium on VLSI Design, Automation and Test|
|Period||26/04/06 → 28/04/06|