A High-Temperature Thermodynamic Model for Metalorganic Vapor Phase Epitaxial Growth of InGaN

Jehn Ou*, Yung Chung Pan, Wen Hsiung Lee, Chen Ke Shu, Heng Ching Lin, Ming Chih Lee, Wen Hsiung Chen, Chung I. Cluang, Horng Chano, Wei-Kuo Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

A thermodynamic analysis tailored with a high-temperature parameter was performed for metalorganic vapor phase epitaxial (MOVPE) growth of InxGa1-xN alloys. Accordingly, a series of InGaN samples were prepared under various input In flow rates and growth temperatures. Theoretical results indicate that the In solid concentration tends to increase with increasing In flow rate and with decreasing temperature, whereas the metal droplets form more easily on the surface at lower growth temperatures and higher In fluxes, which are in good agreement with our experimental data.

Original languageEnglish
Pages (from-to)4958-4961
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume38
Issue number9 A
DOIs
StatePublished - 1 Dec 1999

Keywords

  • High-temperature parameter
  • Ingan
  • MOVPE
  • Thermodynamic analysis

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