A High-Temperature Die-Bonding Structure Fabricated at Low Temperature for Light-Emitting Diodes

Li Chin Cheng; Chih Ming Chen; Ming Guan Chen; Chi Chang Hu; Hsin Yi Jiang; Ray-Hua Horng; Dong Sing Wuu

doi:10.1109/LED.2015.2451018

A High-Temperature Die-Bonding Structure Fabricated at Low Temperature for Light-Emitting Diodes

Li Chin Cheng, Chih Ming Chen^*, Ming Guan Chen, Chi Chang Hu, Hsin Yi Jiang, Ray-Hua Horng, Dong Sing Wuu

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

A trilayer of Sn/Bi/Sn was deposited on a heat sink substrate as the die-bonding material for a light-emitting diode. The eutectic feature of the Sn/Bi system allowed the die-bonding to be carried out at a low temperature using a facile thermocompression process. Two thin Sn layers were sacrificed to form two intermetallic compounds sandwiching the Bi layer, and this high-temperature die-bonding structure showed superior thermal management performance under harsh operation environments (high temperature/current) based on thermal infrared, thermal resistance, and derating analyses.

Original language	English
Article number	7140751
Pages (from-to)	835-837
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	36
Issue number	8
DOIs	https://doi.org/10.1109/LED.2015.2451018
State	Published - 1 Aug 2015

Keywords

die-bonding
diffusion
thermal management

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abstract = "A trilayer of Sn/Bi/Sn was deposited on a heat sink substrate as the die-bonding material for a light-emitting diode. The eutectic feature of the Sn/Bi system allowed the die-bonding to be carried out at a low temperature using a facile thermocompression process. Two thin Sn layers were sacrificed to form two intermetallic compounds sandwiching the Bi layer, and this high-temperature die-bonding structure showed superior thermal management performance under harsh operation environments (high temperature/current) based on thermal infrared, thermal resistance, and derating analyses.",

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author = "Cheng, {Li Chin} and Chen, {Chih Ming} and Chen, {Ming Guan} and Hu, {Chi Chang} and Jiang, {Hsin Yi} and Ray-Hua Horng and Wuu, {Dong Sing}",

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AU - Hu, Chi Chang

AU - Jiang, Hsin Yi

AU - Horng, Ray-Hua

AU - Wuu, Dong Sing

PY - 2015/8/1

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N2 - A trilayer of Sn/Bi/Sn was deposited on a heat sink substrate as the die-bonding material for a light-emitting diode. The eutectic feature of the Sn/Bi system allowed the die-bonding to be carried out at a low temperature using a facile thermocompression process. Two thin Sn layers were sacrificed to form two intermetallic compounds sandwiching the Bi layer, and this high-temperature die-bonding structure showed superior thermal management performance under harsh operation environments (high temperature/current) based on thermal infrared, thermal resistance, and derating analyses.

AB - A trilayer of Sn/Bi/Sn was deposited on a heat sink substrate as the die-bonding material for a light-emitting diode. The eutectic feature of the Sn/Bi system allowed the die-bonding to be carried out at a low temperature using a facile thermocompression process. Two thin Sn layers were sacrificed to form two intermetallic compounds sandwiching the Bi layer, and this high-temperature die-bonding structure showed superior thermal management performance under harsh operation environments (high temperature/current) based on thermal infrared, thermal resistance, and derating analyses.

KW - die-bonding

KW - diffusion

KW - thermal management

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 8

M1 - 7140751

ER -

A High-Temperature Die-Bonding Structure Fabricated at Low Temperature for Light-Emitting Diodes

Abstract

Keywords

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