A High-Temperature Die-Bonding Structure Fabricated at Low Temperature for Light-Emitting Diodes

Li Chin Cheng, Chih Ming Chen*, Ming Guan Chen, Chi Chang Hu, Hsin Yi Jiang, Ray-Hua Horng, Dong Sing Wuu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

A trilayer of Sn/Bi/Sn was deposited on a heat sink substrate as the die-bonding material for a light-emitting diode. The eutectic feature of the Sn/Bi system allowed the die-bonding to be carried out at a low temperature using a facile thermocompression process. Two thin Sn layers were sacrificed to form two intermetallic compounds sandwiching the Bi layer, and this high-temperature die-bonding structure showed superior thermal management performance under harsh operation environments (high temperature/current) based on thermal infrared, thermal resistance, and derating analyses.

Original languageEnglish
Article number7140751
Pages (from-to)835-837
Number of pages3
JournalIEEE Electron Device Letters
Volume36
Issue number8
DOIs
StatePublished - 1 Aug 2015

Keywords

  • die-bonding
  • diffusion
  • thermal management

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