A high speed SOI technology with 12 ps/18 ps gate delay operating at 5V/1.5V

Jian Chen, S. Parke, J. King, F. Assaderaghi, P. K. Ko, Chen-Ming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

16 Scopus citations

Abstract

A high speed Silicon-on-Insulator technology was developed, and a high performance circuit operating at very low power supply voltages was realized. The SOI MOSFETs fabricated on ultra-thin SOI film are fully-depleted and demonstrate excellent short channel behavior. At power supply voltage of VDD=1.5 V and room temperature, typical propagation delay of 18 ps/stage was obtained for depletion-mode NMOS inverter ring oscillator. The best result shows delay time of 14 ps/stage at VDD=1.5 V for ring oscillator fabricated on 500 AA SOI film with Tox=70 AA. This are the best results reported for power supply voltage of 1.5 V at room temperature.

Original languageEnglish
Title of host publication1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages35-38
Number of pages4
ISBN (Electronic)0780308174
DOIs
StatePublished - 1 Jan 1992
Event1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 - San Francisco, United States
Duration: 13 Dec 199216 Dec 1992

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume1992-December
ISSN (Print)0163-1918

Conference

Conference1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
CountryUnited States
CitySan Francisco
Period13/12/9216/12/92

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