A high-speed CMOS on-chip temperature sensor

Louis Luh; John Choma; Jeffrey Draper; Her-Ming Chiueh

A high-speed CMOS on-chip temperature sensor

Louis Luh, John Choma, Jeffrey Draper, Her-Ming Chiueh

Department of Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

16 Scopus citations

Abstract

A high-speed on-chip temperature sensor is implemented in a 0.6μm CMOS process for the purpose of quickly detecting circuit overheating. By using a high-speed differential current switch and a switched-current proportional-to-absolute-temperature PTAT (ΔV_BE) generator, this temperature sensor is able to operate at high speed without suffering from switching noise or input offset problems. A sensing amplifier with chopped output stage and a low-offset current mirror minimize the offset at the output stage. Analog-to-Digital conversion is achieved by a low-power continuous-time switched-current ΣΔ modulator with a 10-bit resolution within 0°C to 150° at a 100kHz output rate. Powered by a single 3.3V power supply, this sensor has an active area of 0.11mm²and a power consumption of 2.9mW with a 40MHz clock.

Original language	English
Article number	1471153
Pages (from-to)	290-293
Number of pages	4
Journal	European Solid-State Circuits Conference
State	Published - 1 Dec 1999
Event	25th European Solid-State Circuits Conference, ESSCIRC 1999 - Duisburg, Germany Duration: 21 Sep 1999 → 23 Sep 1999

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abstract = "A high-speed on-chip temperature sensor is implemented in a 0.6μm CMOS process for the purpose of quickly detecting circuit overheating. By using a high-speed differential current switch and a switched-current proportional-to-absolute-temperature PTAT (ΔVBE) generator, this temperature sensor is able to operate at high speed without suffering from switching noise or input offset problems. A sensing amplifier with chopped output stage and a low-offset current mirror minimize the offset at the output stage. Analog-to-Digital conversion is achieved by a low-power continuous-time switched-current ΣΔ modulator with a 10-bit resolution within 0°C to 150° at a 100kHz output rate. Powered by a single 3.3V power supply, this sensor has an active area of 0.11mm2and a power consumption of 2.9mW with a 40MHz clock.",

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N2 - A high-speed on-chip temperature sensor is implemented in a 0.6μm CMOS process for the purpose of quickly detecting circuit overheating. By using a high-speed differential current switch and a switched-current proportional-to-absolute-temperature PTAT (ΔVBE) generator, this temperature sensor is able to operate at high speed without suffering from switching noise or input offset problems. A sensing amplifier with chopped output stage and a low-offset current mirror minimize the offset at the output stage. Analog-to-Digital conversion is achieved by a low-power continuous-time switched-current ΣΔ modulator with a 10-bit resolution within 0°C to 150° at a 100kHz output rate. Powered by a single 3.3V power supply, this sensor has an active area of 0.11mm2and a power consumption of 2.9mW with a 40MHz clock.

AB - A high-speed on-chip temperature sensor is implemented in a 0.6μm CMOS process for the purpose of quickly detecting circuit overheating. By using a high-speed differential current switch and a switched-current proportional-to-absolute-temperature PTAT (ΔVBE) generator, this temperature sensor is able to operate at high speed without suffering from switching noise or input offset problems. A sensing amplifier with chopped output stage and a low-offset current mirror minimize the offset at the output stage. Analog-to-Digital conversion is achieved by a low-power continuous-time switched-current ΣΔ modulator with a 10-bit resolution within 0°C to 150° at a 100kHz output rate. Powered by a single 3.3V power supply, this sensor has an active area of 0.11mm2and a power consumption of 2.9mW with a 40MHz clock.

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M3 - Conference article

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A high-speed CMOS on-chip temperature sensor

Abstract

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