A high-speed CMOS on-chip temperature sensor

Louis Luh; John Choma; Jeffrey Draper; Her-Ming Chiueh

A high-speed CMOS on-chip temperature sensor

Louis Luh, John Choma, Jeffrey Draper, Her-Ming Chiueh

Department of Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

16 Scopus citations

Abstract

A high-speed on-chip temperature sensor is implemented in a 0.6μm CMOS process for the purpose of quickly detecting circuit overheating. By using a high-speed differential current switch and a switched-current proportional-to-absolute-temperature PTAT (ΔV_BE) generator, this temperature sensor is able to operate at high speed without suffering from switching noise or input offset problems. A sensing amplifier with chopped output stage and a low-offset current mirror minimize the offset at the output stage. Analog-to-Digital conversion is achieved by a low-power continuous-time switched-current ΣΔ modulator with a 10-bit resolution within 0°C to 150° at a 100kHz output rate. Powered by a single 3.3V power supply, this sensor has an active area of 0.11mm²and a power consumption of 2.9mW with a 40MHz clock.

Original language	English
Article number	1471153
Pages (from-to)	290-293
Number of pages	4
Journal	European Solid-State Circuits Conference
State	Published - 1 Dec 1999
Event	25th European Solid-State Circuits Conference, ESSCIRC 1999 - Duisburg, Germany Duration: 21 Sep 1999 → 23 Sep 1999

Fingerprint Dive into the research topics of 'A high-speed CMOS on-chip temperature sensor'. Together they form a unique fingerprint.

Cite this

@article{81b17f13c0d348f5928a43a72e5093f9,

title = "A high-speed CMOS on-chip temperature sensor",

abstract = "A high-speed on-chip temperature sensor is implemented in a 0.6μm CMOS process for the purpose of quickly detecting circuit overheating. By using a high-speed differential current switch and a switched-current proportional-to-absolute-temperature PTAT (ΔVBE) generator, this temperature sensor is able to operate at high speed without suffering from switching noise or input offset problems. A sensing amplifier with chopped output stage and a low-offset current mirror minimize the offset at the output stage. Analog-to-Digital conversion is achieved by a low-power continuous-time switched-current ΣΔ modulator with a 10-bit resolution within 0°C to 150° at a 100kHz output rate. Powered by a single 3.3V power supply, this sensor has an active area of 0.11mm2and a power consumption of 2.9mW with a 40MHz clock.",

author = "Louis Luh and John Choma and Jeffrey Draper and Her-Ming Chiueh",

year = "1999",

month = dec,

day = "1",

language = "English",

pages = "290--293",

journal = "European Solid-State Circuits Conference",

issn = "1930-8833",

note = "null ; Conference date: 21-09-1999 Through 23-09-1999",

}

TY - JOUR

T1 - A high-speed CMOS on-chip temperature sensor

AU - Luh, Louis

AU - Choma, John

AU - Draper, Jeffrey

AU - Chiueh, Her-Ming

PY - 1999/12/1

Y1 - 1999/12/1

N2 - A high-speed on-chip temperature sensor is implemented in a 0.6μm CMOS process for the purpose of quickly detecting circuit overheating. By using a high-speed differential current switch and a switched-current proportional-to-absolute-temperature PTAT (ΔVBE) generator, this temperature sensor is able to operate at high speed without suffering from switching noise or input offset problems. A sensing amplifier with chopped output stage and a low-offset current mirror minimize the offset at the output stage. Analog-to-Digital conversion is achieved by a low-power continuous-time switched-current ΣΔ modulator with a 10-bit resolution within 0°C to 150° at a 100kHz output rate. Powered by a single 3.3V power supply, this sensor has an active area of 0.11mm2and a power consumption of 2.9mW with a 40MHz clock.

AB - A high-speed on-chip temperature sensor is implemented in a 0.6μm CMOS process for the purpose of quickly detecting circuit overheating. By using a high-speed differential current switch and a switched-current proportional-to-absolute-temperature PTAT (ΔVBE) generator, this temperature sensor is able to operate at high speed without suffering from switching noise or input offset problems. A sensing amplifier with chopped output stage and a low-offset current mirror minimize the offset at the output stage. Analog-to-Digital conversion is achieved by a low-power continuous-time switched-current ΣΔ modulator with a 10-bit resolution within 0°C to 150° at a 100kHz output rate. Powered by a single 3.3V power supply, this sensor has an active area of 0.11mm2and a power consumption of 2.9mW with a 40MHz clock.

UR - http://www.scopus.com/inward/record.url?scp=0004248328&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0004248328

SP - 290

EP - 293

JO - European Solid-State Circuits Conference

JF - European Solid-State Circuits Conference

SN - 1930-8833

M1 - 1471153

Y2 - 21 September 1999 through 23 September 1999

ER -