A high-speed 850-nm optical receiver by integrating Si photodiode and CMOS IC

H. Y.M. Hsin, W. K. Huang, Y. C. Liu, B. E. Yan, Wei-Zen Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, three approaches are proposed to implement high-speed 850-nm optical receivers fully in standard bulk 0.18 μm silicon (Si) CMOS technology. In the first approach, the lateral p-i-n photodiode (PD) with designed block well to limit the photocarriers being generated from the laterally depleted regions is integrated in optical receiver. The receiver consists of TIA, LA, offset-cancellation-network and buffer to provide a conversion gain of 110 dBfi and data rate of 2.5 Gbps operation. In the second receiver, the spatially modulated PD (SMPD) with -3 dB bandwidth of 590 MHz is integrated in optical receiver with the extra adaptive equalizer and demonstrates a data rate of 3.125 Gbps. Finally, the proposed novel structure of PD eliminates the slow diffusion photocarriers by using body contact design to create a new current path under the PD. A bandwidth of 2.8 GHz with 100 % improvement in PD is obtained. The eye diagrams of PD with cable connected amplifiers at 2.5 Gbps, 4 Gbps and 5 Gbps are demonstrated. Furthermore, the optical receiver's optical-electrical (O-E) conversion bandwidth is also increased from 3.6 GHz to 4.3 GHz. To our knowledge, these are the highest O-E conversion bandwidth of the PD and optical receiver ever reported by using the standard bulk 0.18 μm Si CMOS technology.

Original languageEnglish
Title of host publicationPhotonics Packaging, Integration, and Interconnects VIII
DOIs
StatePublished - 15 May 2008
EventPhotonics Packaging, Integration, and Interconnects VIII - San Jose, CA, United States
Duration: 22 Jan 200824 Jan 2008

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6899
ISSN (Print)0277-786X

Conference

ConferencePhotonics Packaging, Integration, and Interconnects VIII
CountryUnited States
CitySan Jose, CA
Period22/01/0824/01/08

Keywords

  • 850-nm
  • CMOS
  • Optical receiver
  • Photodiode
  • Si

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