A High-Quality Stacked Thermal/LPCVD Gate Oxide Technology for ULSI

Reza Moazzami, Chen-Ming Hu

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

By stacking thermal and high-quality LPCVD SiO2 films, gate oxides with very low defect densities are demonstrated. Whereas previous reports suggested that a thick layer of LPCVD oxide can improve the stacked gate oxide defect density, it is demonstrated that even 25 A of LPCVD oxide is sufficient to dramatically reduce the defect density compared to thermal oxide films. The projected scaling limit for this technology is estimated to be as low as 70 A for the total stack thickness. An optimized thermal/ LPCVD oxide technology is very promising as the gate dielectric for sub-half-micrometer CMOS technology.

Original languageEnglish
Pages (from-to)72-73
Number of pages2
JournalIEEE Electron Device Letters
Volume14
Issue number2
DOIs
StatePublished - 1 Jan 1993

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