A high Q on-chip bondwire transformer and its application to low power receiver front-end design

Chun Hsing Li; Chien-Nan Kuo; Ming Ching Kuo

doi:10.1109/SiRF.2013.6489452

A high Q on-chip bondwire transformer and its application to low power receiver front-end design

Chun Hsing Li^*, Chien-Nan Kuo, Ming Ching Kuo

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This work presents a high Q on-chip bondwire transformer and its application to a low power receiver front-end design. The proposed bondwire transformer has the advantage of high quality factor, less sensitivity to the bonding height variation, and working as a balun to conduct single-to- differential conversion. Furthermore, the chip area under the bondwire transformer can be reused by the mixer and buffer circuits to reduce the cost. The receiver front-end is realized in 1P6M 0.18 μm CMOS technology. The measured input return loss, the conversion gain, the noise figure, and the input third-order intercept point are 12.7 dB, 20.5 dB, 9.8 dB, and -4.0 dBm, respectively, at 2.1 GHz. The power consumption is only 1.1 mW from a 1 V supply.

Original language	English
Title of host publication	2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013
Pages	120-122
Number of pages	3
DOIs	https://doi.org/10.1109/SiRF.2013.6489452
State	Published - 15 Apr 2013
Event	2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - 2013 7th IEEE Radio and Wireless Week, RWW 2013 - Austin, TX, United States Duration: 21 Jan 2013 → 23 Jan 2013

Publication series

Name	2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013

Conference

Conference	2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - 2013 7th IEEE Radio and Wireless Week, RWW 2013
Country	United States
City	Austin, TX
Period	21/01/13 → 23/01/13

Keywords

bondwire
Low power
receiver
transformer

Access to Document

10.1109/SiRF.2013.6489452

Link to publication in Scopus

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Li, C. H., Kuo, C-N., & Kuo, M. C. (2013). A high Q on-chip bondwire transformer and its application to low power receiver front-end design. In 2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013 (pp. 120-122). [6489452] (2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013). https://doi.org/10.1109/SiRF.2013.6489452

Li, Chun Hsing ; Kuo, Chien-Nan ; Kuo, Ming Ching. / A high Q on-chip bondwire transformer and its application to low power receiver front-end design. 2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013. 2013. pp. 120-122 (2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013).

@inproceedings{dc61212be28c4d38b7f45db04572bc4d,

title = "A high Q on-chip bondwire transformer and its application to low power receiver front-end design",

abstract = "This work presents a high Q on-chip bondwire transformer and its application to a low power receiver front-end design. The proposed bondwire transformer has the advantage of high quality factor, less sensitivity to the bonding height variation, and working as a balun to conduct single-to- differential conversion. Furthermore, the chip area under the bondwire transformer can be reused by the mixer and buffer circuits to reduce the cost. The receiver front-end is realized in 1P6M 0.18 μm CMOS technology. The measured input return loss, the conversion gain, the noise figure, and the input third-order intercept point are 12.7 dB, 20.5 dB, 9.8 dB, and -4.0 dBm, respectively, at 2.1 GHz. The power consumption is only 1.1 mW from a 1 V supply.",

keywords = "bondwire, Low power, receiver, transformer",

author = "Li, {Chun Hsing} and Chien-Nan Kuo and Kuo, {Ming Ching}",

year = "2013",

month = apr,

day = "15",

doi = "10.1109/SiRF.2013.6489452",

language = "English",

isbn = "9781467315517",

series = "2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013",

pages = "120--122",

booktitle = "2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013",

note = "null ; Conference date: 21-01-2013 Through 23-01-2013",

}

Li, CH, Kuo, C-N & Kuo, MC 2013, A high Q on-chip bondwire transformer and its application to low power receiver front-end design. in 2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013., 6489452, 2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013, pp. 120-122, 2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - 2013 7th IEEE Radio and Wireless Week, RWW 2013, Austin, TX, United States, 21/01/13. https://doi.org/10.1109/SiRF.2013.6489452

A high Q on-chip bondwire transformer and its application to low power receiver front-end design. / Li, Chun Hsing; Kuo, Chien-Nan; Kuo, Ming Ching.

2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013. 2013. p. 120-122 6489452 (2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - This work presents a high Q on-chip bondwire transformer and its application to a low power receiver front-end design. The proposed bondwire transformer has the advantage of high quality factor, less sensitivity to the bonding height variation, and working as a balun to conduct single-to- differential conversion. Furthermore, the chip area under the bondwire transformer can be reused by the mixer and buffer circuits to reduce the cost. The receiver front-end is realized in 1P6M 0.18 μm CMOS technology. The measured input return loss, the conversion gain, the noise figure, and the input third-order intercept point are 12.7 dB, 20.5 dB, 9.8 dB, and -4.0 dBm, respectively, at 2.1 GHz. The power consumption is only 1.1 mW from a 1 V supply.

AB - This work presents a high Q on-chip bondwire transformer and its application to a low power receiver front-end design. The proposed bondwire transformer has the advantage of high quality factor, less sensitivity to the bonding height variation, and working as a balun to conduct single-to- differential conversion. Furthermore, the chip area under the bondwire transformer can be reused by the mixer and buffer circuits to reduce the cost. The receiver front-end is realized in 1P6M 0.18 μm CMOS technology. The measured input return loss, the conversion gain, the noise figure, and the input third-order intercept point are 12.7 dB, 20.5 dB, 9.8 dB, and -4.0 dBm, respectively, at 2.1 GHz. The power consumption is only 1.1 mW from a 1 V supply.

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T3 - 2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013

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Li CH, Kuo C-N, Kuo MC. A high Q on-chip bondwire transformer and its application to low power receiver front-end design. In 2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013. 2013. p. 120-122. 6489452. (2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013). https://doi.org/10.1109/SiRF.2013.6489452