TY - GEN
T1 - A high Q on-chip bondwire transformer and its application to low power receiver front-end design
AU - Li, Chun Hsing
AU - Kuo, Chien-Nan
AU - Kuo, Ming Ching
PY - 2013/4/15
Y1 - 2013/4/15
N2 - This work presents a high Q on-chip bondwire transformer and its application to a low power receiver front-end design. The proposed bondwire transformer has the advantage of high quality factor, less sensitivity to the bonding height variation, and working as a balun to conduct single-to- differential conversion. Furthermore, the chip area under the bondwire transformer can be reused by the mixer and buffer circuits to reduce the cost. The receiver front-end is realized in 1P6M 0.18 μm CMOS technology. The measured input return loss, the conversion gain, the noise figure, and the input third-order intercept point are 12.7 dB, 20.5 dB, 9.8 dB, and -4.0 dBm, respectively, at 2.1 GHz. The power consumption is only 1.1 mW from a 1 V supply.
AB - This work presents a high Q on-chip bondwire transformer and its application to a low power receiver front-end design. The proposed bondwire transformer has the advantage of high quality factor, less sensitivity to the bonding height variation, and working as a balun to conduct single-to- differential conversion. Furthermore, the chip area under the bondwire transformer can be reused by the mixer and buffer circuits to reduce the cost. The receiver front-end is realized in 1P6M 0.18 μm CMOS technology. The measured input return loss, the conversion gain, the noise figure, and the input third-order intercept point are 12.7 dB, 20.5 dB, 9.8 dB, and -4.0 dBm, respectively, at 2.1 GHz. The power consumption is only 1.1 mW from a 1 V supply.
KW - bondwire
KW - Low power
KW - receiver
KW - transformer
UR - http://www.scopus.com/inward/record.url?scp=84875999531&partnerID=8YFLogxK
U2 - 10.1109/SiRF.2013.6489452
DO - 10.1109/SiRF.2013.6489452
M3 - Conference contribution
AN - SCOPUS:84875999531
SN - 9781467315517
T3 - 2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013
SP - 120
EP - 122
BT - 2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013
Y2 - 21 January 2013 through 23 January 2013
ER -