A high Q on-chip bondwire transformer and its application to low power receiver front-end design

Chun Hsing Li*, Chien-Nan Kuo, Ming Ching Kuo

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work presents a high Q on-chip bondwire transformer and its application to a low power receiver front-end design. The proposed bondwire transformer has the advantage of high quality factor, less sensitivity to the bonding height variation, and working as a balun to conduct single-to- differential conversion. Furthermore, the chip area under the bondwire transformer can be reused by the mixer and buffer circuits to reduce the cost. The receiver front-end is realized in 1P6M 0.18 μm CMOS technology. The measured input return loss, the conversion gain, the noise figure, and the input third-order intercept point are 12.7 dB, 20.5 dB, 9.8 dB, and -4.0 dBm, respectively, at 2.1 GHz. The power consumption is only 1.1 mW from a 1 V supply.

Original languageEnglish
Title of host publication2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013
Pages120-122
Number of pages3
DOIs
StatePublished - 15 Apr 2013
Event2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - 2013 7th IEEE Radio and Wireless Week, RWW 2013 - Austin, TX, United States
Duration: 21 Jan 201323 Jan 2013

Publication series

Name2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013

Conference

Conference2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - 2013 7th IEEE Radio and Wireless Week, RWW 2013
CountryUnited States
CityAustin, TX
Period21/01/1323/01/13

Keywords

  • bondwire
  • Low power
  • receiver
  • transformer

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    Li, C. H., Kuo, C-N., & Kuo, M. C. (2013). A high Q on-chip bondwire transformer and its application to low power receiver front-end design. In 2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013 (pp. 120-122). [6489452] (2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013). https://doi.org/10.1109/SiRF.2013.6489452