An extremely high power Tx/Rx switch IC based on AlGaN/GaN HFETs has been developed for the first time. A low on-state resistance realized by Si doping technique and a low off-state capacitance by using A12O3 substrate lead to excellent performance of 0.26 dB insertion loss and 27 dB isolation with the power handling capability of 43W at 1GHz.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - 1 Dec 2003|
|Event||IEEE International Electron Devices Meeting - Washington, DC, United States|
Duration: 8 Dec 2003 → 10 Dec 2003