A High Power Tx/Rx Switch IC using AlGaN/GaN HFETs

H. Ishida*, Y. Hirose, T. Murata, A. Kanda, Y. Ikeda, T. Matsuno, K. Inoue, Y. Uemoto, T. Tanaka, T. Egawa, Daisuke Ueda

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

17 Scopus citations

Abstract

An extremely high power Tx/Rx switch IC based on AlGaN/GaN HFETs has been developed for the first time. A low on-state resistance realized by Si doping technique and a low off-state capacitance by using A12O3 substrate lead to excellent performance of 0.26 dB insertion loss and 27 dB isolation with the power handling capability of 43W at 1GHz.

Original languageEnglish
Pages (from-to)583-586
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - 1 Dec 2003
EventIEEE International Electron Devices Meeting - Washington, DC, United States
Duration: 8 Dec 200310 Dec 2003

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