A high-power RF switch IC using AlGaN/GaN HFETs with single-stage configuration

Hidetoshi Ishida*, Yutaka Hirose, Tomohiro Murata, Yoshito Ikeda, Toshinobu Matsuno, Kaoru Inoue, Yasuhiro Uemoto, Tsuyoshi Tanaka, Takashi Egawa, Daisuke Ueda

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

58 Scopus citations

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Chemical Compounds

Engineering & Materials Science