TY - JOUR
T1 - A high performance transparent resistive switching memory made from ZrO 2 /AlON bilayer structure
AU - Tsai, Tsung Ling
AU - Chang, Hsiang Yu
AU - Lou, Jesse Jen Chung
AU - Tseng, Tseung-Yuen
PY - 2016/4/11
Y1 - 2016/4/11
N2 -
In this study, the switching properties of an indium tin oxide (ITO)/zirconium oxide (ZrO
2
)/ITO single layer device and those of a device with an aluminum oxynitride (AlON) layer were investigated. The devices with highly transparent characteristics were fabricated. Compared with the ITO/ZrO
2
/ITO single layer device, the ITO/ZrO
2
/AlON/ITO bilayer device exhibited a larger ON/OFF ratio, higher endurance performance, and superior retention properties by using a simple two-step forming process. These substantial improvements in the resistive switching properties were attributed to the minimized influence of oxygen migration through the ITO top electrode (TE), which can be realized by forming an asymmetrical conductive filament with the weakest part at the ZrO
2
/AlON interface. Therefore, in the ITO/ZrO
2
/AlON/ITO bilayer device, the regions where conductive filament formation and rupture occur can be effectively moved from the TE interface to the interior of the device.
AB -
In this study, the switching properties of an indium tin oxide (ITO)/zirconium oxide (ZrO
2
)/ITO single layer device and those of a device with an aluminum oxynitride (AlON) layer were investigated. The devices with highly transparent characteristics were fabricated. Compared with the ITO/ZrO
2
/ITO single layer device, the ITO/ZrO
2
/AlON/ITO bilayer device exhibited a larger ON/OFF ratio, higher endurance performance, and superior retention properties by using a simple two-step forming process. These substantial improvements in the resistive switching properties were attributed to the minimized influence of oxygen migration through the ITO top electrode (TE), which can be realized by forming an asymmetrical conductive filament with the weakest part at the ZrO
2
/AlON interface. Therefore, in the ITO/ZrO
2
/AlON/ITO bilayer device, the regions where conductive filament formation and rupture occur can be effectively moved from the TE interface to the interior of the device.
UR - http://www.scopus.com/inward/record.url?scp=84964469513&partnerID=8YFLogxK
U2 - 10.1063/1.4946006
DO - 10.1063/1.4946006
M3 - Article
AN - SCOPUS:84964469513
VL - 108
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 15
M1 - 153505
ER -