A high-performance T-shape gate poly-Si thin film transistor with vacuum gaps fabricated by simple selective side-etching process

Chun Yu Wu; Ta Chuan Liao; Chung Yuan Kung; Feng Tso Chien; Chi Wen Chen; Huang-Chung Cheng

A high-performance T-shape gate poly-Si thin film transistor with vacuum gaps fabricated by simple selective side-etching process

Chun Yu Wu^*, Ta Chuan Liao, Chung Yuan Kung, Feng Tso Chien, Chi Wen Chen, Huang-Chung Cheng

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A high performance T-shape gate (T-Gate) polycrystalline silicon thin-film transistors (poly-Si TFTs) with a vacuum gap was proposed and fabricated only with simply selective side-etching. Experimental results reveal that the proposed T-Gate poly-Si TFTs have excellent electrical performance, which has higher on-off current ratio of 4.6 × 10⁷. Its maximum leakage current was found to be effectively suppressed and about 100 times less than the conventional poly-Si TFT. Moreover, the T-Gate structure also exhibits lower kink current compared with conventional TFTs.

Original language	English
Title of host publication	Proceedings of the 5th International Conference on Semiconductor Technology, ISTC 2006
Pages	175-180
Number of pages	6
State	Published - 29 Sep 2006
Event	5th International Conference on Semiconductor Technology, ISTC 2006 - Shanghai, China Duration: 21 Mar 2006 → 23 Mar 2006

Publication series

Name	Proceedings - Electrochemical Society
Volume	PV 2006-03

Conference

Conference	5th International Conference on Semiconductor Technology, ISTC 2006
Country	China
City	Shanghai
Period	21/03/06 → 23/03/06

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Wu, C. Y., Liao, T. C., Kung, C. Y., Chien, F. T., Chen, C. W., & Cheng, H-C. (2006). A high-performance T-shape gate poly-Si thin film transistor with vacuum gaps fabricated by simple selective side-etching process. In Proceedings of the 5th International Conference on Semiconductor Technology, ISTC 2006 (pp. 175-180). (Proceedings - Electrochemical Society; Vol. PV 2006-03).

Wu, Chun Yu ; Liao, Ta Chuan ; Kung, Chung Yuan ; Chien, Feng Tso ; Chen, Chi Wen ; Cheng, Huang-Chung. / A high-performance T-shape gate poly-Si thin film transistor with vacuum gaps fabricated by simple selective side-etching process. Proceedings of the 5th International Conference on Semiconductor Technology, ISTC 2006. 2006. pp. 175-180 (Proceedings - Electrochemical Society).

@inproceedings{10b223212d214ca7824d4313470a11d2,

title = "A high-performance T-shape gate poly-Si thin film transistor with vacuum gaps fabricated by simple selective side-etching process",

abstract = "A high performance T-shape gate (T-Gate) polycrystalline silicon thin-film transistors (poly-Si TFTs) with a vacuum gap was proposed and fabricated only with simply selective side-etching. Experimental results reveal that the proposed T-Gate poly-Si TFTs have excellent electrical performance, which has higher on-off current ratio of 4.6 × 107. Its maximum leakage current was found to be effectively suppressed and about 100 times less than the conventional poly-Si TFT. Moreover, the T-Gate structure also exhibits lower kink current compared with conventional TFTs.",

author = "Wu, {Chun Yu} and Liao, {Ta Chuan} and Kung, {Chung Yuan} and Chien, {Feng Tso} and Chen, {Chi Wen} and Huang-Chung Cheng",

year = "2006",

month = sep,

day = "29",

language = "English",

isbn = "1566774373",

series = "Proceedings - Electrochemical Society",

pages = "175--180",

booktitle = "Proceedings of the 5th International Conference on Semiconductor Technology, ISTC 2006",

note = "null ; Conference date: 21-03-2006 Through 23-03-2006",

}

Wu, CY, Liao, TC, Kung, CY, Chien, FT, Chen, CW & Cheng, H-C 2006, A high-performance T-shape gate poly-Si thin film transistor with vacuum gaps fabricated by simple selective side-etching process. in Proceedings of the 5th International Conference on Semiconductor Technology, ISTC 2006. Proceedings - Electrochemical Society, vol. PV 2006-03, pp. 175-180, 5th International Conference on Semiconductor Technology, ISTC 2006, Shanghai, China, 21/03/06.

A high-performance T-shape gate poly-Si thin film transistor with vacuum gaps fabricated by simple selective side-etching process. / Wu, Chun Yu; Liao, Ta Chuan; Kung, Chung Yuan; Chien, Feng Tso; Chen, Chi Wen; Cheng, Huang-Chung.

Proceedings of the 5th International Conference on Semiconductor Technology, ISTC 2006. 2006. p. 175-180 (Proceedings - Electrochemical Society; Vol. PV 2006-03).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A high-performance T-shape gate poly-Si thin film transistor with vacuum gaps fabricated by simple selective side-etching process

AU - Wu, Chun Yu

AU - Liao, Ta Chuan

AU - Kung, Chung Yuan

AU - Chien, Feng Tso

AU - Chen, Chi Wen

AU - Cheng, Huang-Chung

PY - 2006/9/29

Y1 - 2006/9/29

N2 - A high performance T-shape gate (T-Gate) polycrystalline silicon thin-film transistors (poly-Si TFTs) with a vacuum gap was proposed and fabricated only with simply selective side-etching. Experimental results reveal that the proposed T-Gate poly-Si TFTs have excellent electrical performance, which has higher on-off current ratio of 4.6 × 107. Its maximum leakage current was found to be effectively suppressed and about 100 times less than the conventional poly-Si TFT. Moreover, the T-Gate structure also exhibits lower kink current compared with conventional TFTs.

AB - A high performance T-shape gate (T-Gate) polycrystalline silicon thin-film transistors (poly-Si TFTs) with a vacuum gap was proposed and fabricated only with simply selective side-etching. Experimental results reveal that the proposed T-Gate poly-Si TFTs have excellent electrical performance, which has higher on-off current ratio of 4.6 × 107. Its maximum leakage current was found to be effectively suppressed and about 100 times less than the conventional poly-Si TFT. Moreover, the T-Gate structure also exhibits lower kink current compared with conventional TFTs.

UR - http://www.scopus.com/inward/record.url?scp=33748960610&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:33748960610

SN - 1566774373

SN - 9781566774376

T3 - Proceedings - Electrochemical Society

SP - 175

EP - 180

BT - Proceedings of the 5th International Conference on Semiconductor Technology, ISTC 2006

Y2 - 21 March 2006 through 23 March 2006

ER -