A high-performance T-shape gate poly-Si thin film transistor with vacuum gaps fabricated by simple selective side-etching process

Chun Yu Wu*, Ta Chuan Liao, Chung Yuan Kung, Feng Tso Chien, Chi Wen Chen, Huang-Chung Cheng

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A high performance T-shape gate (T-Gate) polycrystalline silicon thin-film transistors (poly-Si TFTs) with a vacuum gap was proposed and fabricated only with simply selective side-etching. Experimental results reveal that the proposed T-Gate poly-Si TFTs have excellent electrical performance, which has higher on-off current ratio of 4.6 × 107. Its maximum leakage current was found to be effectively suppressed and about 100 times less than the conventional poly-Si TFT. Moreover, the T-Gate structure also exhibits lower kink current compared with conventional TFTs.

Original languageEnglish
Title of host publicationProceedings of the 5th International Conference on Semiconductor Technology, ISTC 2006
Pages175-180
Number of pages6
StatePublished - 29 Sep 2006
Event5th International Conference on Semiconductor Technology, ISTC 2006 - Shanghai, China
Duration: 21 Mar 200623 Mar 2006

Publication series

NameProceedings - Electrochemical Society
VolumePV 2006-03

Conference

Conference5th International Conference on Semiconductor Technology, ISTC 2006
CountryChina
CityShanghai
Period21/03/0623/03/06

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