A high performance epitaxial SiGe-base ECL BiCMOS technology

D. L. Harame, E. F. Crabbe, J. D. Cressler, J. H. Comfort, J. Y.C. Sun, S. R. Stiffler, E. Kobeda, J. N. Burghartz, M. M. Gilbert, J. C. Malinowski, A. J. Dally, S. Ratanaphanyarat, M. J. Saccamango, W. Rausch, J. Cotte, C. Chu, J. M.C. Stork

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

56 Scopus citations

Abstract

In this work we present a high speed, self-aligned SiGe epitaxial-base ECL BiCMOS technology in which we achieved a record 18.9 ps ECL gate delay at 7.7 mW, 59 GHz peak fmax, 50 GHz peak fT, and 0.25 mu m-channel CMOS devices with transconductances of 240 mS/mm for the nFET and 140 mS/mm for the pFET. Key technology features include a dielectric-filled deep and shallow trench isolation, a polysilicon-emitter SiGe-epitaxial-base NPN, a low-thermal-cycle 0.25 mu m-channel CMOS, a self-aligned silicide on extrinsic base and Source/Drain/Gate, a thin Ti/W local interconnect combined with two metal levels of AlCu, a nitride/oxide decoupling capacitor, and polysilicon resistors. This BiCMOS process is the highest level of integration and performance yet achieved in a SiGe-base technology.

Original languageEnglish
Title of host publication1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages19-22
Number of pages4
ISBN (Electronic)0780308174
DOIs
StatePublished - 1992
Event1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 - San Francisco, United States
Duration: 13 Dec 199216 Dec 1992

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume1992-December
ISSN (Print)0163-1918

Conference

Conference1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
CountryUnited States
CitySan Francisco
Period13/12/9216/12/92

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