A high-performance 30-nm gate-all-around poly-si nanowire thin-film transistor with NH3 plasma treatment

Chen Ming Lee*, Bing-Yue Tsui

*Corresponding author for this work

Research output: Contribution to journalArticle

18 Scopus citations

Abstract

A novel 30-nm gate-all-around (GAA) polycrystalline-silicon (poly-Si) nanowire (NW) thin-film transistor (TFT) is reported for the first time. Owing to the NW and GAA structure, the channel electric potential is well controlled by the gate electrode. After NH3 plasma treatment for defects passivation, the values of 0.97 V, 224 mV/dec., and 0.895 V/V of threshold voltage, subthreshold swing, and drain-induced barrier lowering are achieved, respectively. A high driving current of 459 μA/μm and an on-state/off-state current ratio of 5 ×107 are also obtained. These excellent characteristics indicate that the ultrasmall GAA NW poly-Si TFT would have the potential to be applied in the 3-D integrated-circuit or system-on-panel field.

Original languageEnglish
Article number5482205
Pages (from-to)683-685
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number7
DOIs
StatePublished - 1 Jul 2010

Keywords

  • Gate-all-around (GAA)
  • poly-Si nanowire
  • thin-film transistor (TFT)

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