An AlGaAs/GaAs heterojunction bipolar transistor monolithic microwave IC (HBT MMIC) power amplifier is developed that demonstrates very high power-added efficiency, high gain, and broad bandwidth. It uses a cascode structure with four 200-μm common-emitter HBT cells driving four common-base cells of the same size. This amplifier achieves over 14-dB gain from 6 to 10 GHz, with a peak power-added efficiency (PAE) of 47% at 7.5 GHz at an output power level of 31 dBm. This corresponds to a power density of over 3 W per millimeter of emitter length. Input and output matching networks, as well as biasing networks, are all contained within the chip, which measures 80 × 80 mils (2 × 2 mm).
|Number of pages||4|
|State||Published - 1 Oct 1990|
|Event||12th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - GaAs IC - New Orleans, LA, USA|
Duration: 7 Oct 1990 → 10 Oct 1990
|Conference||12th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - GaAs IC|
|City||New Orleans, LA, USA|
|Period||7/10/90 → 10/10/90|