A high-efficiency, broadband and high output power PHEMT balanced K-Band doubler with integrated balun

Wen Ren Lee*, Shih Fong Chao, Zuo-Min Tsai , Pin Cheng Huang, Chun Hsien Lien, Jeng Han Tsai, Huei Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

A high-efficiency and high output power K-Band frequency doubler using InGaAs PHEMT power device is developed, which features high fundamental frequency rejection, high efficiency, good conversion gain over wide bandwidth, and high output power. A compact lumped rat-race hybrid and an output buffer amplifier are implemented on chip for a balanced design and high output power. The circuit exhibits measured conversions gain about 8 dB over the output frequencies from 12 to 22 GHz. The fundamental frequency suppression is better than 20 dB and the second harmonic saturation output power is higher than 12 dBm with a miniature chip size of 2 mm × mm.

Original languageEnglish
Title of host publication2006 Asia-Pacific Microwave Conference Proceedings, APMC
Pages763-766
Number of pages4
DOIs
StatePublished - 1 Dec 2006
Event2006 Asia-Pacific Microwave Conference, APMC - Yokohama, Japan
Duration: 12 Dec 200615 Dec 2006

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC
Volume2

Conference

Conference2006 Asia-Pacific Microwave Conference, APMC
CountryJapan
CityYokohama
Period12/12/0615/12/06

Keywords

  • Doubler
  • High-efficiency
  • K-band
  • MMIC
  • PHEMT

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