A high 2LO-RF isolation SiGe BiCMOS sub-harmonic Gilbert mixer using stacked-LO-stage topology

Tzung Han Wu*, Chinchun Meng

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A 5.2 GHz SiGe BiCMOS stacked-LO-stage CMFB (Common Mode Feedback) sub-harmonic mixer is demonstrated in this letter. The stacked-LO-stage and the active loads are used to improve the 2LO-RF isolation and the conversion gain, respectively. The SiGe mixer includes five levels of transistors stacked together at the supply voltage of 3.3 V because of the low knee-voltage characteristic of the SiGe HBTs (Heterojunction Bipolar Transistors). The mixer demonstrated achieves 23 dB conversion gain and -78 dB 2LO-RF isolation.

Original languageEnglish
Title of host publication2006 IEEE Region 10 Conference, TENCON 2006
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)1424405491, 9781424405497
DOIs
StatePublished - 1 Jan 2006
Event2006 IEEE Region 10 Conference, TENCON 2006 - Hong Kong, China
Duration: 14 Nov 200617 Nov 2006

Publication series

NameIEEE Region 10 Annual International Conference, Proceedings/TENCON
ISSN (Print)2159-3442
ISSN (Electronic)2159-3450

Conference

Conference2006 IEEE Region 10 Conference, TENCON 2006
CountryChina
CityHong Kong
Period14/11/0617/11/06

Keywords

  • 2LO-to-RF isolation
  • Gilbert mixer
  • Self-mixing
  • SiGe BiCMOS
  • Sub-harmonic mixer

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