A high 2LO-RF isolation SiGe BiCMOS sub-harmonic Gilbert mixer using stacked-LO-stage topology

Tzung Han Wu; Chinchun Meng

doi:10.1109/TENCON.2006.343775

A high 2LO-RF isolation SiGe BiCMOS sub-harmonic Gilbert mixer using stacked-LO-stage topology

Tzung Han Wu^*, Chinchun Meng

^*Corresponding author for this work

National Chiao Tung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A 5.2 GHz SiGe BiCMOS stacked-LO-stage CMFB (Common Mode Feedback) sub-harmonic mixer is demonstrated in this letter. The stacked-LO-stage and the active loads are used to improve the 2LO-RF isolation and the conversion gain, respectively. The SiGe mixer includes five levels of transistors stacked together at the supply voltage of 3.3 V because of the low knee-voltage characteristic of the SiGe HBTs (Heterojunction Bipolar Transistors). The mixer demonstrated achieves 23 dB conversion gain and -78 dB 2LO-RF isolation.

Original language	English
Title of host publication	2006 IEEE Region 10 Conference, TENCON 2006
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	1424405491, 9781424405497
DOIs	https://doi.org/10.1109/TENCON.2006.343775
State	Published - 1 Jan 2006
Event	2006 IEEE Region 10 Conference, TENCON 2006 - Hong Kong, China Duration: 14 Nov 2006 → 17 Nov 2006

Publication series

Name	IEEE Region 10 Annual International Conference, Proceedings/TENCON
ISSN (Print)	2159-3442
ISSN (Electronic)	2159-3450

Conference

Conference	2006 IEEE Region 10 Conference, TENCON 2006
Country	China
City	Hong Kong
Period	14/11/06 → 17/11/06

Keywords

2LO-to-RF isolation
Gilbert mixer
Self-mixing
SiGe BiCMOS
Sub-harmonic mixer

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Cite this

@inproceedings{837427363f88444496b91d84f9eb3b51,

title = "A high 2LO-RF isolation SiGe BiCMOS sub-harmonic Gilbert mixer using stacked-LO-stage topology",

abstract = "A 5.2 GHz SiGe BiCMOS stacked-LO-stage CMFB (Common Mode Feedback) sub-harmonic mixer is demonstrated in this letter. The stacked-LO-stage and the active loads are used to improve the 2LO-RF isolation and the conversion gain, respectively. The SiGe mixer includes five levels of transistors stacked together at the supply voltage of 3.3 V because of the low knee-voltage characteristic of the SiGe HBTs (Heterojunction Bipolar Transistors). The mixer demonstrated achieves 23 dB conversion gain and -78 dB 2LO-RF isolation.",

keywords = "2LO-to-RF isolation, Gilbert mixer, Self-mixing, SiGe BiCMOS, Sub-harmonic mixer",

author = "Wu, {Tzung Han} and Chinchun Meng",

year = "2006",

month = jan,

day = "1",

doi = "10.1109/TENCON.2006.343775",

language = "English",

isbn = "1424405491",

series = "IEEE Region 10 Annual International Conference, Proceedings/TENCON",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2006 IEEE Region 10 Conference, TENCON 2006",

address = "United States",

note = "null ; Conference date: 14-11-2006 Through 17-11-2006",

}

Wu, TH & Meng, C 2006, A high 2LO-RF isolation SiGe BiCMOS sub-harmonic Gilbert mixer using stacked-LO-stage topology. in 2006 IEEE Region 10 Conference, TENCON 2006., 4142450, IEEE Region 10 Annual International Conference, Proceedings/TENCON, Institute of Electrical and Electronics Engineers Inc., 2006 IEEE Region 10 Conference, TENCON 2006, Hong Kong, China, 14/11/06. https://doi.org/10.1109/TENCON.2006.343775

A high 2LO-RF isolation SiGe BiCMOS sub-harmonic Gilbert mixer using stacked-LO-stage topology. / Wu, Tzung Han; Meng, Chinchun.

2006 IEEE Region 10 Conference, TENCON 2006. Institute of Electrical and Electronics Engineers Inc., 2006. 4142450 (IEEE Region 10 Annual International Conference, Proceedings/TENCON).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Meng, Chinchun

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N2 - A 5.2 GHz SiGe BiCMOS stacked-LO-stage CMFB (Common Mode Feedback) sub-harmonic mixer is demonstrated in this letter. The stacked-LO-stage and the active loads are used to improve the 2LO-RF isolation and the conversion gain, respectively. The SiGe mixer includes five levels of transistors stacked together at the supply voltage of 3.3 V because of the low knee-voltage characteristic of the SiGe HBTs (Heterojunction Bipolar Transistors). The mixer demonstrated achieves 23 dB conversion gain and -78 dB 2LO-RF isolation.

AB - A 5.2 GHz SiGe BiCMOS stacked-LO-stage CMFB (Common Mode Feedback) sub-harmonic mixer is demonstrated in this letter. The stacked-LO-stage and the active loads are used to improve the 2LO-RF isolation and the conversion gain, respectively. The SiGe mixer includes five levels of transistors stacked together at the supply voltage of 3.3 V because of the low knee-voltage characteristic of the SiGe HBTs (Heterojunction Bipolar Transistors). The mixer demonstrated achieves 23 dB conversion gain and -78 dB 2LO-RF isolation.

KW - 2LO-to-RF isolation

KW - Gilbert mixer

KW - Self-mixing

KW - SiGe BiCMOS

KW - Sub-harmonic mixer

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SN - 9781424405497

T3 - IEEE Region 10 Annual International Conference, Proceedings/TENCON

BT - 2006 IEEE Region 10 Conference, TENCON 2006

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 14 November 2006 through 17 November 2006

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