A hermetic glass-silicon package formed using localized aluminum/silicon-glass bonding

Yu-Ting Cheng*, Liwei Lin, Khalil Najafi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

70 Scopus citations

Abstract

A hermetic package based on localized aluminum/silicon-to-glass bonding has been successfully demonstrated. Less than 0.2 MPa contact pressure with 46 mA current input for two parallel 3.5-μm-wide polysilicon on-chip microheaters can raise the temperature of the bonding region to 700°C bonding temperature and achieve a strong and reliable bond in 7.5 min. The formation of aluminum oxide with silicon precipitate composite layer is believed to be the source of the strong bond. Accelerated testing in an autoclave shows some packages survive more than 450 h under 3 atm, 100% RH and 128°C. Premature failure has been attributed to some unbonded regions on the failed samples. The bonding yield and reliability have been improved by increasing bonding time and applied pressure.

Original languageEnglish
Pages (from-to)392-399
Number of pages8
JournalJournal of Microelectromechanical Systems
Volume10
Issue number3
DOIs
StatePublished - 1 Sep 2001

Keywords

  • Activation energy
  • Aluminum/(silicon)-glass bonding
  • Hermetic MEMS package
  • Localized heating
  • Reliability

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