A gate-free monolayer WSe2 pn diode

Jhih Wei Chen, Shun-Tsung Lo, Sheng Chin Ho, Sheng Shong Wong, Thi Hai Yen Vu, Xin Quan Zhang, Yi De Liu, Yu You Chiou, Yu Xun Chen, Jan Chi Yang, Yi Chun Chen, Ying-hao Chu, Yi Hsien Lee, Chung Jen Chung, Tse Ming Chen, Chia Hao Chen, Chung Lin Wu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

39 Scopus citations


Interest in bringing p- and n-type monolayer semiconducting transition metal dichalcogenides (TMD) into contact to form rectifying pn diode has thrived since it is crucial to control the electrical properties in two-dimensional (2D) electronic and optoelectronic devices. Usually this involves vertically stacking different TMDs with pn heterojunction or, laterally manipulating carrier density by gate biasing. Here, by utilizing a locally reversed ferroelectric polarization, we laterally manipulate the carrier density and created a WSe 2 pn homojunction on the supporting ferroelectric BiFeO 3 substrate. This non-volatile WSe 2 pn homojunction is demonstrated with optical and scanning probe methods and scanning photoelectron micro-spectroscopy. A homo-interface is a direct manifestation of our WSe 2 pn diode, which can be quantitatively understood as a clear rectifying behavior. The non-volatile confinement of carriers and associated gate-free pn homojunction can be an addition to the 2D electron–photon toolbox and pave the way to develop laterally 2D electronics and photonics.

Original languageEnglish
Article number3143
JournalNature Communications
Issue number1
StatePublished - 1 Dec 2018

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