A GaN-based surface-emitting laser with 45°-inclined mirror in horizontal cavity

Masao Kawaguchi*, Satoshi Tamura, Masaaki Yuri, Daisuke Ueda

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A novel GaN-based surface-emitting laser was realized by utilizing total internal reflection (TIR) by an inclined mirror formed at one end of the horizontal cavity of an edge-emitting laser. The inclined mirror was fabricated by focused ion beam (FIB) etching. The mirror was inclined by 45° with respect to the surface normal. The guided light propagating along the horizontal-cavity is reflected at the mirror to the surface normal. We analyzed optical losses in the laser. To increase the external quantum efficiency, removal of an FIB-damaged layer and precise control of the mirror angle are important. Argon-milling was applied to the FIB-etched surface to remove the FIB-damaged layer which causes an optical loss. The fabricated device with the stripe width of 8 Âμm and the cavity length of 600 μm lased at 390 nm with a threshold current of 260 mA. Surface-emission was obtained with beam divergence angles of 24.0° and 6.2°, corresponding to perpendicular and parallel to the junction plane, respectively. The presented surface-emitting laser is suitable to form high-power GaN-based 2D laser arrays.

Original languageEnglish
Title of host publicationNovel In-Plane Semiconductor Lasers VII
DOIs
StatePublished - 20 Mar 2008
EventNovel In-Plane Semiconductor Lasers VII - San Jose, CA, United States
Duration: 21 Jan 200724 Jan 2007

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6909
ISSN (Print)0277-786X

Conference

ConferenceNovel In-Plane Semiconductor Lasers VII
CountryUnited States
CitySan Jose, CA
Period21/01/0724/01/07

Keywords

  • GaN
  • High-power
  • Semiconductor laser
  • Surface-emitting

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