A GaN 3×3 matrix converter chipset with Drive-by-Microwave technologies

Shuichi Nagai, Yasuhiro Yamada, Noboru Negoro, Hiroyuki Handa, Yuji Kudoh, Hiroaki Ueno, Masahiro Ishida, Nobuyuki Otuska, Daisuke Ueda

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

17 Scopus citations

Abstract

A matrix converter [1] that directly transduces power and frequency by bidirectional switches has been expected to be an ultimate AC-to-AC converter because it eliminates limited-lifetime capacitors and achieves high efficiency power conversion even without PFC (Power Factor Control) circuits. However, it has not been practically realized due to the following issues resulting from the abundant components it includes. There has been no existing monolithic bidirectional switch that offers a high blocking voltage with current-handling capability and no compact isolated gate driver that provides a gate signal against a positive/negative voltage reference at every moment. Consequently, the matrix converter with discrete components makes the system large and complicated because of numerous power switches and isolated drivers. Relevant to this discussion, GaN devices [2] are very attractive in power applications since the GaN bidirectional power switches with a high blocking voltage can be monolithically implemented by using its lateral device structure [3]. Additionally, a GaN Drive-by-Microwave (DBM) isolated gate driver [4] is the best candidate for a matrix converter, because it is very compact being both photo-coupler and transformer free and co-integratable with GaN power devices. These GaN integration technologies are very valuable in terms of a high-speed switching with less inductance among lines as well as offering a small system size.

Original languageEnglish
Title of host publication2014 IEEE International Solid-State Circuits Conference, ISSCC 2014 - Digest of Technical Papers
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages494-495
Number of pages2
ISBN (Print)9781479909186
DOIs
StatePublished - 1 Jan 2014
Event2014 61st IEEE International Solid-State Circuits Conference, ISSCC 2014 - San Francisco, CA, United States
Duration: 9 Feb 201413 Feb 2014

Publication series

NameDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Volume57
ISSN (Print)0193-6530

Conference

Conference2014 61st IEEE International Solid-State Circuits Conference, ISSCC 2014
CountryUnited States
CitySan Francisco, CA
Period9/02/1413/02/14

Fingerprint Dive into the research topics of 'A GaN 3×3 matrix converter chipset with Drive-by-Microwave technologies'. Together they form a unique fingerprint.

Cite this