A GaMn liquid metal ion source for spintronic device fabrication

S. Vijendran*, Sheng-Di Lin, G. A.C. Jones

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations


A new alloy liquid metal ion source (LMIS) has been developed which may be used for the focused ion beam patterning of magnetic elements into GaAs wafers. The GaMn alloy source had a composition of 90% Ga and 10% Mn by atomic weight. The source displayed good operating characteristics with stable and low emission currents. Typical turn-on currents were about 10 μA at an extraction voltage of -6 kV. The maximum current attained for the Mn2+ beam was 0.8 nA (current density ∼0.1 A/cm2), which would allow the real-time patterning of approximately (100 μm)2 of Ga0.95Mn 0.05As during the wafer growth. Beam resolution was 5 μm, and with the excellent mass separation between the different ion species, and reasonably large beam currents, it demonstrates the suitability of the source for high-resolution device patterning.

Original languageEnglish
Pages (from-to)111-115
Number of pages5
JournalMicroelectronic Engineering
StatePublished - 1 Jan 2004
EventMicro and Nano Engineering 2003 - Cambridge, United Kingdom
Duration: 22 Sep 200325 Sep 2003


  • Focused ion beam
  • GaMnAs
  • Liquid metal ion source
  • Spintronic

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