A fully-differential subthreshold SRAM Cell with auto-compensation

Mu Tien Chang*, Wei Hwang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

11 Scopus citations

Abstract

SRAM cell stability is a major challenge in subthreshold SRAM design. In this paper, a robust, fully-differential subthreshold 10-transistors SRAM cell with auto-compensation is proposed. With the auto-compensation mechanism, the proposed cell exhibits better hold static noise margin (SNM). The cell structure also prevents storage nodes from bitline noise interference, thus improving read SNM. Moreover, better write ability is achieved by applying write assist technique. Based on UMC 90nm CMOS technology, simulation results shows that at 200mV supply voltage, the proposed cell has 1.22X hold SNM improvement, 2.09X read SNM improvement, and 2.03X write margin improvement compared to the conventional 6T SRAM cell.

Original languageEnglish
Title of host publicationProceedings of APCCAS 2008 - 2008 IEEE Asia Pacific Conference on Circuits and Systems
Pages1771-1774
Number of pages4
DOIs
StatePublished - 1 Dec 2008
EventAPCCAS 2008 - 2008 IEEE Asia Pacific Conference on Circuits and Systems - Macao, China
Duration: 30 Nov 20083 Dec 2008

Publication series

NameIEEE Asia-Pacific Conference on Circuits and Systems, Proceedings, APCCAS

Conference

ConferenceAPCCAS 2008 - 2008 IEEE Asia Pacific Conference on Circuits and Systems
CountryChina
CityMacao
Period30/11/083/12/08

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