A Fluorographene-Based Synaptic Transistor

Bo Liu, Ming Chun Hong, Mamina Sahoo, Bin Leong Ong, Eng Soon Tok, Meng Fu Di, Yu Ping Ho, Hanyuan Liang, Jong Shing Bow, Zhiwei Liu, Jer Chyi Wang, Tuo-Hung Hou*, Chao Sung Lai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Exploring brain-inspired synaptic devices has recently become a new focus of research in nanoelectronic communities. In this emerging field, incorporating 2D materials into three-terminal synaptic transistors has brought various advantages. However, achieving a stable and long-term weight-modulation in these synaptic transistors, which are typically based on interface charge storage, is still a challenge due to the nature of their spontaneous relaxation. The application of an atomically thin fluorographene layer into the synaptic junction region suppresses this issue and improves the efficiency, tunability, and symmetry of the synaptic plasticity as well as establishing a stable weight-regulation paradigm. These unique properties can be attributed to the dipolar rotation of CF in fluorographene. To obtain a better physical understanding, a vacancy-dependent CF dipolar rotation model is proposed and supported by hysteresis analysis and density functional theory calculations. As proposed and demonstrated, the unique fluorographene-based synaptic transistor may be a promising building block for constructing efficient neuromorphic computing hardware.

Original languageEnglish
Article number1900422
JournalAdvanced Materials Technologies
DOIs
StateAccepted/In press - 1 Jan 2019

Keywords

  • fluorographene
  • long-term potentiation
  • low-damage fluorination
  • spike timing dependent plasticity
  • synaptic transistors

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