A flip-chip packaged 80-nm In 0.7 Ga 0.3 As MHEMT for millimeter-wave low-noise applications

Chin Te Wang, Chien I. Kuo, Heng-Tung Hsu, Edward Yi Chang, Li Han Hsu, Wee Chin Lim, Che Yang Chiang, Szu Ping Tsai, Guo Wei Huang

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


In this paper, we present a flip-chip 80-nm In 0.7 Ga 0.3 As MHEMT device on an alumina (Al 2 O 3 ) substrate with very little decay on device RF performance up to 60 GHz. After package, the device exhibited high I DS = 435 mA/mm at V DS = 1.5 V, high g m = 930 mS/mm at V DS = 1.3 V, the measured gain was 7.5 dB and the minimum noise figure (NF min ) was 2.5 dB at 60 GHz. As compared to the bare chip, the packaged device exhibited very small degradation in performance. The result shows that with proper design of the matching circuits and packaging materials, the flip-chip technology can be used for discrete low noise FET package up to millimeter-wave range.

Original languageEnglish
Pages (from-to)183-186
Number of pages4
JournalMicroelectronic Engineering
Issue number2
StatePublished - 1 Feb 2011


  • Flip-chip
  • HEMTs
  • High frequency package
  • In Ga As-channel

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