In this paper, we present a flip-chip 80-nm In 0.7 Ga 0.3 As MHEMT device on an alumina (Al 2 O 3 ) substrate with very little decay on device RF performance up to 60 GHz. After package, the device exhibited high I DS = 435 mA/mm at V DS = 1.5 V, high g m = 930 mS/mm at V DS = 1.3 V, the measured gain was 7.5 dB and the minimum noise figure (NF min ) was 2.5 dB at 60 GHz. As compared to the bare chip, the packaged device exhibited very small degradation in performance. The result shows that with proper design of the matching circuits and packaging materials, the flip-chip technology can be used for discrete low noise FET package up to millimeter-wave range.
- High frequency package
- In Ga As-channel