A flexible organic pentacene nonvolatile memory based on high- κ dielectric layers

Ming Feng Chang*, Po-Tsung Lee, S. P. McAlister, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

40 Scopus citations

Abstract

We report a pentacene thin film transistor nonvolatile memory fabricated on a flexible polyimide substrate. This device shows a low program/erase voltage of 12 V, a speed of 1/100 ms, an initial memory window of 2.4 V, and a 0.78 V memory window after 48 h. This has been achieved by using a high- κ dielectric as charge trapping, blocking, and tunneling gate insulator layers.

Original languageEnglish
Article number233302
JournalApplied Physics Letters
Volume93
Issue number23
DOIs
StatePublished - 19 Dec 2008

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