A flexible microwave de-embedding method for on-wafer noise parameter characterization of MOSFETs

Yueh Hua Wang*, Ming Hsiang Cho, Lin-Kun Wu

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

A flexible noise de-embedding method for on-wafer microwave measurements of silicon MOSFETs is presented in this study. We use the open, short, and thru dummy structures to subtract the parasitic effects from the probe pads and interconnects of a fixtured MOS transistor. The thru standard are used to extract the interconnect parameters for subtracting the interconnect parasitics in gate, drain, and source terminals of the MOSFET. The parasitics of the dangling leg in the source terminal are also modeled and taken into account in the noise de-embedding procedure. The MOS transistors and de-embedding dummy structures were fabricated in a standard CMOS process and characterized up to 20 GHz. Compared with the conventional de-embedding methods, the proposed technique is accurate and area-efficient.

Original languageEnglish
Pages (from-to)1157-1162
Number of pages6
JournalIEICE Transactions on Electronics
VolumeE92-C
Issue number9
DOIs
StatePublished - 1 Jan 2009

Keywords

  • De-embedding
  • MOSFETs
  • Microwave
  • Noise
  • RF
  • Silicon

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