A Film-Profile-Engineered 3-D InGaZnO Inverter Technology With Systematically Tunable Threshold Voltage

Rong Jhe Lyu, Horng-Chih Lin, Pei-Wen Li, Tiao Yuan Huang

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

In this paper, a new depletion-load metal oxide-based inverter with 3-D structure is realized with film-profile-engineered InGaZnO (IGZO) thin-film transistors (TFTs). The proposed inverter possesses vertically stacked load and drive TFTs whose threshold voltage can be flexibly adjusted into a wide range of -2.3-1 V through merely adjusting the geometric parameters without the necessity of additional processes or masks. The 3-D IGZO inverters constructed through the proposed technology demonstrate full-swing switching with voltage gains up to 19 V/V under an operation voltage of 9 V. The 3-D inverters can not only reduce the footprint but also promote the resistance toward light-induced instability.

Original languageEnglish
Article number7508409
Pages (from-to)3533-3539
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume63
Issue number9
DOIs
StatePublished - 1 Sep 2016

Keywords

  • Film profile engineering (FPE)
  • InGaZnO (IGZO)
  • inverter
  • logic gate
  • metal oxide (MO)
  • thin-film transistors (TFTs)
  • voltage gain

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