A Ferroelectric DRAM Cell for High-Density NVRAM’s

Reza Moazzami, Chen-Ming Hu, William H. Shepherd

Research output: Contribution to journalArticle

63 Scopus citations

Abstract

The operation of a ferroelectric DRAM cell for nonvolatile RAM (NVRAM) applications is described. Because polarization reversal only occurs during nonvolatile store /recall operations but not during read/write operations, ferroelectric fatigue is not a serious endurance problem. For a 3-V power supply, the worst-case effective silicon dioxide thickness of the unoptimized lead zirconate titanate film studied here is less than 17 Å. This cell can be the basis of a very high-density NVRAM with practically no read/write cycle limit and at least 1010 nonvolatile store/recall cycles.

Original languageEnglish
Pages (from-to)454-456
Number of pages3
JournalIEEE Electron Device Letters
Volume11
Issue number10
DOIs
StatePublished - 1 Jan 1990

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