A ferroelectric DRAM cell for high density NVRAMs

Reza Moazzami*, Chen-Ming Hu, William H. Shepherd

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

11 Scopus citations

Abstract

The operation of a ferroelectric memory cell for nonvolatile random access memory (NVRAM) applications is described. Because ferroelectric polarization reversal only occurs during store/recall but not DRAM read/write, ferroelectric fatigue is not a serious endurance problem. In the worst case, the effective silicon dioxide thickness of the unoptimized film studied here is less than 15 angstrom. The resistivity and endurance properties of the ferroelectric films can be optimized by modifying the composition of the film. This cell can be the basis of a very high density nonvolatile RAM with practically no read/write cycle limit and at least 1010 nonvolatile store/recall cycles.

Original languageEnglish
Pages (from-to)15-16
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
StatePublished - 1 Dec 1990
Event1990 Symposium on VLSI Technology - Honolulu, HI, United States
Duration: 4 Jun 19907 Jun 1990

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