A fabrication of germanium nanocrystal embedded in silicon-oxygen-nitride layer

Chun Hao Tu*, Ting Chang Chang, Po-Tsun Liu, Hsin Chou Liu, Chi Feng Weng, Jang Hung Shy, Bae Heng Tseng, Tseung-Yuen Tseng, Simon M. Sze, Chun Yen Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


The formation of germanium nanocrystals embedded in silicon-oxygen-nitride (SiON) layer acting as distributed charge storage elements is proposed in this work. A large memory window is observed due to the isolated Ge nanocrystals in the SiON gate stack layer. The Ge nanocrystals were nucleated after the high-temperature oxidation of SiGeN layer. The nonvolatile memory device with the Ge nanocrystals embedded in SiON stack layer exhibits 4 V threshold voltage shift under 7 V write operation. Also, the sequent high-temperature oxidation of the SiGeN layer acting as the blocking oxide is proposed to enhance the performance of nonvolatile memory devices.

Original languageEnglish
Pages (from-to)G358-G360
Number of pages3
JournalElectrochemical and Solid-State Letters
Issue number12
StatePublished - 12 Oct 2006

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