A Drive-by-Microwave isolated gate driver with a high-speed voltage monitoring

Shuichi Nagai, Yasufumi Kawai, Osamu Tabata, Hideaki Fujiwara, Yasuhiro Yamada, Nobuyuki Otsuka, Daisuke Ueda, Noboru Negoro, Masahiro Ishida

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

A new isolated Drive-by-Microwave (DBM) gate driver with a high-speed voltage monitoring for over current detection is proposed, which is composed of a 2.4GHz GaN/Si DBM transmitter, DBM receiver chip and compact isolated couplers in a low-cost printed circuit board. The fabricated DBM gate driver demonstrates a 200 Mbps isolated data transmission and a GaN power switching device's driving with a turn-on skew rate of 4.2kV/us. Furthermore, it successfully detects the isolated 1.0Mbps monitoring signal at the secondary side without any isolated voltage source by means of detecting the 2.4GHz return power changing that results from the impedance miss matching of the varicap diode at a receiver.

Original languageEnglish
Title of host publicationProceedings of the 26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages434-437
Number of pages4
ISBN (Print)9781479929177
DOIs
StatePublished - 1 Jan 2014
Event26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014 - Waikoloa, HI, United States
Duration: 15 Jun 201419 Jun 2014

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN (Print)1063-6854

Conference

Conference26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014
CountryUnited States
CityWaikoloa, HI
Period15/06/1419/06/14

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  • Cite this

    Nagai, S., Kawai, Y., Tabata, O., Fujiwara, H., Yamada, Y., Otsuka, N., Ueda, D., Negoro, N., & Ishida, M. (2014). A Drive-by-Microwave isolated gate driver with a high-speed voltage monitoring. In Proceedings of the 26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014 (pp. 434-437). [6856069] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD.2014.6856069