A distributed charge storage with GeO2 nanodots

T. C. Chang*, S. T. Yan, C. H. Hsu, M. T. Tang, J. F. Lee, Ya-Hsiang Tai, Po-Tsun Liu, S. M. Sze

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

43 Scopus citations

Abstract

In this study, a distributed charge storage with GeO2 nanodots is demonstrated. The mean size and aerial density of the nanodots embedded in SiO2 are estimated to be about 5.5 nm and 4.3×1011 cm−2, respectively. The composition of the dots is also confirmed to be GeO2 by x-ray absorption near-edge structure analyses. A significant memory effect is observed through the electrical measurements. Under the low voltage operation of 5 V, the memory window is estimated to ∼0.45 V. Also, a physical model is proposed to demonstrate the charge storage effect through the interfacial traps of GeO2 nanodots.
Original languageEnglish
Pages (from-to)2581-2583
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number14
DOIs
StatePublished - 5 Apr 2004

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