In this study, a distributed charge storage with GeO2 nanodots is demonstrated. The mean size and aerial density of the nanodots embedded in SiO2 are estimated to be about 5.5 nm and 4.3×1011 cm−2, respectively. The composition of the dots is also confirmed to be GeO2 by x-ray absorption near-edge structure analyses. A significant memory effect is observed through the electrical measurements. Under the low voltage operation of 5 V, the memory window is estimated to ∼0.45 V. Also, a physical model is proposed to demonstrate the charge storage effect through the interfacial traps of GeO2 nanodots.